Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface von Frantskevich, N.V., Fedotov, A.K., Frantskevich, A.V., Mazanik, N.V.

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Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment von Frantskevich, N.V., Mazanik, A.V., Frantskevich, A.V., Kołtunowicz, T., Żukowski, P.

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Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing von Frantskevich, N.V., Frantskevich, A.V., Fedotov, A.K., Mazanik, A.V.

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Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing von Frantskevich, N.V., Frantskevich, A.V., Fedotov, A.K., Mazanik, A.V.

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SEM and SIMS study of the buried Si xN y layer formed in silicon von Saad, A.M., Frantskevich, A.V., Fedotov, A.K., Rau, E.I., Mazanik, A.V., Frantskevich, N.V., Węgierek, P., Kołtunowicz, T., Żukowski, P.

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SEM and SIMS study of the buried SixNy layer formed in silicon von Saad, A.M., Frantskevich, A.V., Fedotov, A.K., Rau, E.I., Mazanik, A.V., Frantskevich, N.V., Węgierek, P., Kołtunowicz, T., Żukowski, P.

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Formation of nanotubes in Cz Si wafers using He + implantation and subsequent O +- or N +-plasma treatment von Frantskevich, A.V., Saad, A.M., Frantskevich, N.V., Fedotov, A.K., Mazanik, A.V., Tarasik, M.I., Yanchenko, A.M., Węgierek, P., Żukowski, P.

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Formation of buried insulating island-like SiO2 layer in silicon von Frantskevich, A.V., Fedotov, A.K., Frantskevich, N.V., Mazanik, A.V., Rau, E.I., Kulinkayskas, V.S.

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Formation of buried insulating island-like SiO 2 layer in silicon von Frantskevich, A.V., Fedotov, A.K., Frantskevich, N.V., Mazanik, A.V., Rau, E.I., Kulinkayskas, V.S.

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SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon von Frantskevich, N.V., Saad, Anis M., Frantskevich, A.V., Fedotov, A.K., Mazanik, A.V., Rau, E.I.

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Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer von Frantskevich, N.V., Saad, Anis M., Frantskevich, A.V., Fedotov, A.K., Mazanik, A.V.

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Structure and Electrical Properties of Nanocrystalline CdS0.2 Se0.8 Films Sputtered on Substrates with a Silver Sublayer von Saad, Anis M., Frantskevich, A.V., Petrov, A.F., Mazanik, A.V., Fink, D., Fedotov, A.K., Stukalov, O., Figielski, T.

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The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon von Ulyashin, A.G, Ivanov, A.I, Job, R, Fahrner, W.R, Frantskevich, A.V, Komarov, F.F, Kamyshan, A.C

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Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing von Chigir, S.V., Saad, Anis M., Frantskevich, A.V., Fedotov, A.K., Mazanik, A.V., Rau, E.I.

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