Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Steady-state and transient electron transport within bulk wurtzite zinc oxide von O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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Transient electron transport in wurtzite GaN, InN, and AlN von Foutz, Brian E., O’Leary, Stephen K., Shur, Michael S., Eastman, Lester F.

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Potential performance of indium-nitride-based devices von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficie... von O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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Electron transport in wurtzite indium nitride von O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.

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Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Reduction of Test Data Volume and Improvement of Diagnosability Using Hybrid Compression von UZZAMAN, Anis, KELLER, Brion, FOUTZ, Brian, BHATIA, Sandeep, BARTENSTEIN, Thomas, ARAI, Masayuki, IWASAKI, Kazuhiko

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Polar optical phonon instability and intervalley transfer in III-V semiconductors von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Channel masking synthesis for efficient on-chip test compression von Chickermane, V., Foutz, B., Keller, B.

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Reduction of Test Data Volume and Improvement of Diagnosability Using Hybrid Compression : Test, diagnosis and verification of SOCs von UZZAMAN, Anis, KELLER, Brion, FOUTZ, Brian, BHATIA, Sandeep, BARTENSTEIN, Thomas, ARAI, Masayuki, IWASAKI, Kazuhiko

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Monte Carlo simulation of electron transport in wurtzite aluminum nitride von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.

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Efficient stimulus independent timing abstraction model based on a new concept of circuit block transparency von Foltin, Martin, Foutz, Brian, Tyler, Sean

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Test-point flop sharing with improved testability in a circuit design von Singhal, Sarthak, Rai, Prateek Kumar, Papameletis, Christos, Foutz, Brian, Chickermane, Vivek, Chakravadhanula, Krishna

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Efficient stimulus independent timing abstraction model based on a new concept of circuit block transparency von Foltin, M., Foutz, B., Tyler, S.

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On defining the optical gap of an amorphous semiconductor : an empirical calibration for the case of hydrogenated amorphous silicon von SWEENOR, D. E, O'LEARY, S. K, FOUTZ, B. E

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Systems and methods for scan chain stitching von Singhal, Sarthak, Mukherjee, Subhasish, Papameletis, Christos, Arora, Puneet, Foutz, Brian, Card, Norman, Bandejia, Ankit, Chakravadhanula, Krishna V

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Method to improve testability using 2-dimensional exclusive or (XOR) grids von Foutz, Brian Edward, Papameletis, Christos, Chakravadhanula, Krishna Vijaya, Chickermane, Vivek

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Optimizing Test Data Volume Using Hybrid Compression von Keller, B., Bhatia, S., Bartenstein, T., Foutz, B., Uzzaman, A.

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