TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS von Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn, Fossum, Jerry G.

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Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs von Trivedi, V.P., Fossum, J.G.

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Nanoscale FinFETs with gate-source/drain underlap von Trivedi, V., Fossum, J.G., Chowdhury, M.M.

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New Insights on "Capacitorless" Floating-Body DRAM Cells von Fossum, J.G., Zhichao Lu, Trivedi, V.P.

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Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel von Chouksey, S., Fossum, J.G., Behnam, A., Agrawal, S., Mathew, L.

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GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node von Ya-Chi Huang, Meng-Hsueh Chiang, Shui-Jinn Wang, Fossum, Jerry G.

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On the threshold voltage of Strained-Si-Si1-xGex MOSFETs von WEIMIN ZHANG, FOSSUM, Jerry G

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Physical insights regarding design and performance of independent-gate FinFETs von Weimin Zhang, Fossum, J.G., Mathew, L., Yang Du

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Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs von Ji-Song Lim, Thompson, S.E., Fossum, J.G.

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Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs von Lixin Ge, Fossum, J.G.

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A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM von Zhichao Lu, Fossum, J.G., Weimin Zhang, Trivedi, V.P., Mathew, L., Sadd, M.

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A Physical Model for Fringe Capacitance in Double-Gate MOSFETs With Non-Abrupt Source/Drain Junctions and Gate Underlap von Agrawal, Shishir, Fossum, Jerry G

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Physical insights on nanoscale multi-gate CMOS design von Fossum, Jerry G.

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Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source/Drain Underlap von Seung-Hwan Kim, Fossum, J.G., Ji-Woon Yang

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Physical Insights on BJT-Based 1T DRAM Cells von Zhenming Zhou, Fossum, J.G., Zhichao Lu

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SOI versus bulk-silicon nanoscale FinFETs von Fossum, Jerry G., Zhou, Zhenming, Mathew, Leo, Nguyen, Bich-Yen

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Insights on Design and Scalability of Thin-BOX FD/SOI CMOS von Chouksey, S, Fossum, J G, Agrawal, S

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Design Optimization and Performance Projections of Double-Gate FinFETs With Gate-Source/Drain Underlap for SRAM Application von Seung-Hwan Kim, Fossum, J.G.

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A Floating-Body/Gate DRAM Cell Upgraded for Long Retention Time von Zhichao Lu, Fossum, Jerry G, Zhenming Zhou

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The ITFET: A Novel FinFET-Based Hybrid Device von Zhang, W., Fossum, J.G., Mathew, L.

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