Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs von Trivedi, V.P., Fossum, J.G.

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Physical insights regarding design and performance of independent-gate FinFETs von Weimin Zhang, Fossum, J.G., Mathew, L., Yang Du

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Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs von Ji-Song Lim, Thompson, S.E., Fossum, J.G.

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Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs von Lixin Ge, Fossum, J.G.

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Nanoscale FinFETs with gate-source/drain underlap von Trivedi, V., Fossum, J.G., Chowdhury, M.M.

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On the threshold voltage of Strained-Si-Si1-xGex MOSFETs von WEIMIN ZHANG, FOSSUM, Jerry G

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Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source/Drain Underlap von Seung-Hwan Kim, Fossum, J.G., Ji-Woon Yang

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Physical Insights on BJT-Based 1T DRAM Cells von Zhenming Zhou, Fossum, J.G., Zhichao Lu

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Design Optimization and Performance Projections of Double-Gate FinFETs With Gate-Source/Drain Underlap for SRAM Application von Seung-Hwan Kim, Fossum, J.G.

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On the feasibility of nanoscale triple-gate CMOS transistors von Ji-Woon Yang, Fossum, J.G.

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GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node von Ya-Chi Huang, Meng-Hsueh Chiang, Shui-Jinn Wang, Fossum, Jerry G.

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Insights on Design and Scalability of Thin-BOX FD/SOI CMOS von Chouksey, S, Fossum, J G, Agrawal, S

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Short-Channel Effects in Independent-Gate FinFETs von Zhichao Lu, Fossum, J.G.

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Nanoscale FD/SOI CMOS: thick or thin BOX? von Trivedi, V.P., Fossum, J.G.

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New Insights on "Capacitorless" Floating-Body DRAM Cells von Fossum, J.G., Zhichao Lu, Trivedi, V.P.

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Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel von Chouksey, S., Fossum, J.G., Behnam, A., Agrawal, S., Mathew, L.

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Suppression of corner effects in triple-gate MOSFETs von Fossum, J.G., Yang, J.-W., Trivedi, V.P.

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Speed superiority of scaled double-gate CMOS von Fossum, J.G., Lixin Ge, Meng-Hsueh Chiang

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The ITFET: A Novel FinFET-Based Hybrid Device von Zhang, W., Fossum, J.G., Mathew, L.

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Bulk inversion in FinFETs and implied insights on effective gate width von Seung-Hwan Kim, Fossum, J.G., Trivedi, V.P.

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