High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure von Lazarev, S., Bauer, S., Forghani, K., Barchuk, M., Scholz, F., Baumbach, T.

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Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1−xBix explored by atom probe tomography and HAADF-STEM von Wood, Adam W, Chen, Weixin, Kim, Honghyuk, Guan, Yingxin, Forghani, K, Anand, A, Kuech, T F, Mawst, L J, Babcock, S E

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TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers von KLEIN, O, BISKUPEK, J, FORGHANI, K, SCHOLZ, F, KAISER, U

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Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration von Kim, T.W., Forghani, K., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.

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Strain-compensated GaAs1−yPy GaAs1−zBiz GaAs1−yPy quantum wells for laser applications von Kim, H, Forghani, K, Guan, Y, Luo, G, Anand, A, Morgan, D, Kuech, T F, Mawst, L J, Lingley, Z R, Foran, B J, Sin, Y

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Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscop... von Wood, A. W., Guan, Y., Forghani, K., Anand, A., Kuech, T. F., Babcock, S. E.

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TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiN interlayers von Klein, O., Biskupek, J., Forghani, K., Scholz, F., Kaiser, U.

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Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction von Klein, O, Biskupek, J, Kaiser, U, Forghani, K, Thapa, S B, Scholz, F

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High quality AlGaN epilayers grown on sapphire using SiN interlayers von Forghani, K., Klein, M., Lipski, F., Schwaiger, S., Hertkorn, J., Leute, R.A.R., Scholz, F., Feneberg, M., Neuschl, B., Thonke, K., Klein, O., Kaiser, U., Gutt, R., Passow, T.

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Composition dependent valence band order in c-oriented wurtzite AlGaN layers von Neuschl, B., Helbing, J., Knab, M., Lauer, H., Madel, M., Thonke, K., Meisch, T., Forghani, K., Scholz, F., Feneberg, M.

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Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics von Kim, H., Forghani, K., Guan, Y., Kim, K., Wood, A.W., Lee, J., Babcock, S.E., Kuech, T.F., Mawst, L.J.

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Annealing-induced precipitate formation behavior in MOVPE-grown GaAs 1-x Bi x explored by atom probe tomography and HAADF-STEM von Wood, Adam W, Chen, Weixin, Kim, Honghyuk, Guan, Yingxin, Forghani, K, Anand, A, Kuech, T F, Mawst, L J, Babcock, S E

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Analysis of diamond surface channel field-effect transistors with AlN passivation layers von Pietzka, C., Scharpf, J., Fikry, M., Heinz, D., Forghani, K., Meisch, T., Diemant, Th, Behm, R. J., Bernhard, J., Biskupek, J., Kaiser, U., Scholz, F., Kohn, E.

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Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers von Neuschl, B., Fujan, K. J., Feneberg, M., Tischer, I., Thonke, K., Forghani, K., Klein, M., Scholz, F.

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Strain-compensated GaAs 1− y P y /GaAs 1− z Bi z /GaAs 1− y P y quantum wells for laser applications von Kim, H, Forghani, K, Guan, Y, Luo, G, Anand, A, Morgan, D, Kuech, T F, Mawst, L J, Lingley, Z R, Foran, B J, Sin, Y

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TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiN x interlayers von Klein, O., Biskupek, J., Forghani, K., Scholz, F., Kaiser, U.

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Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system von Lazarev, S., Barchuk, M., Bauer, S., Forghani, K., Holý, V., Scholz, F., Baumbach, T.

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Unexpected Bismuth Concentration Profiles in MOVPE GaAs 1-x Bi x Films Revealed by HAADF STEM Imaging von Wood, A. W., Guan, Yingxin, Forghani, K., Mawst, L.J., Kuech, T. F., Babcock, S. E.

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Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers von Neuschl, B., Fujan, K. J., Feneberg, M., Tischer, I., Thonke, K., Forghani, K., Klein, M., Scholz, F.

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Bismuth Particle Formation in Annealed Dilute GaAs i-x-y P y Bi x Alloys von Lingley, Z. R., Foran, B., Brodie, M., Sin, Y., Wells, N.P., Moss, S. C., Forghani, K., Guan, Y., Mawst, L., Kim, H., Kim, T.-H., Kuech, T. F.

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