Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells von Bailey, Christopher G., Forbes, David V., Raffaelle, Ryne P., Hubbard, Seth M.

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Study of the incorporation factor ( K) and its application to laser diode production von Hansen, D.M., Goodnough, T.J., Corbett, P.B., Zhang, L., Forbes, D.V.

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The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor von Forbes, D.V., Corbett, P.B., Hansen, D.M., Goodnough, T.J., Zhang, L., Myli, K., Yeh, J.-Y., Mawst, L.

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Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices von Polly, S.J., Bailey, C.G., Grede, A.J., Forbes, D.V., Hubbard, S.M.

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InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers von Han, H., Forbes, D.V., Coleman, J.J.

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Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices von Polly, S. J., Bailey, C. G., Grede, A. J., Forbes, D. V., Hubbard, S. M.

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Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1−xPx von Kim, N. H., Ramamurthy, P., Mawst, L. J., Kuech, T. F., Modak, P., Goodnough, T. J., Forbes, D. V., Kanskar, M.

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Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition von Nakamura, F., Kim, Y. D., Yoon, E., Forbes, D. V., Coleman, J. J.

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Self-aligned high-quality total internal reflection mirrors von Han, H., Forbes, D.V., Coleman, J.J.

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Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy von Lammert, R.M., Cockerill, T.M., Forbes, D.V., Smith, G.M., Coleman, J.J.

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Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD von Lammert, R.M., Cockerill, T.M., Forbes, D.V., Coleman, J.J.

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A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition von Osowski, M.L., Cockerill, T.M., Lammert, R.M., Forbes, D.V., Ackley, D.E., Coleman, J.J.

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Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs von KLATT, J. L, AVERBACK, R. S, FORBES, D. V, COLEMAN, J. J

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Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers von Smith, G.M., Forbes, D.V., Coleman, J.J., Verdeyen, J.T.

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A new buffer layer for MOCVD growth of GaN on sapphire von LI, X, FORBES, D. V, GU, S. Q, TURNBULL, D. A, BISHOP, S. G, COLEMAN, J. J

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Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays von Han, H., Holehouse, N., Forbes, D.V., Coleman, J.J.

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An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity von Fang, Z.J., Smith, G.M., Forbes, D.V., Coleman, J.J.

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A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array von Fang, Z.J., Smith, G.M., Forbes, D.V., Coleman, J.J.

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Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD von Lammert, R.M., Mena, P.V., Forbes, D.V., Osowski, M.L., Kang, S.M., Coleman, J.J.

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Optical properties of annealed, single GaAs quantum wells : cap doping and mask width dependence von CROOK, A. C, FORBES, D. V, HERZINGER, C. M

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