Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Sharp-switching band-modulation back-gated devices in advanced FDSOI technology von El Dirani, Hassan, Fonteneau, Pascal, Solaro, Yohann, Legrand, Charles-Alex, Marin-Cudraz, David, Ferrari, Philippe, Cristoloveanu, Sorin

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A band-modulation device in advanced FDSOI technology: Sharp switching characteristics von El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin

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Sharp Logic Switch Based on Band Modulation von Lee, Kyung Hwa, El Dirani, Hassan, Fonteneau, Pascal, Bawedin, Maryline, Cristoloveanu, Sorin

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Properties and mechanisms of Z2-FET at variable temperature von Dirani, Hassan El, Solaro, Yohann, Fonteneau, Pascal, Ferrari, Philippe, Cristoloveanu, Sorin

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Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Duan, Meng, Parihar, Mukta Singh, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Lee, Kyunghwa, Sampedro, Carlos, Cheng, Binjie, El Dirani, Hassan, Barbé, Jean-Charles, Fonteneau, Pascal, Kim, Seong-Il, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Gamiz, Francisco

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FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Meng Duan, Singh Parihar, Mukta, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Kyunghwa Lee, Sampedro, Carlos, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Seong-Il Kim, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Gamiz, Francisco

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Z2-FET: A promising FDSOI device for ESD protection von Solaro, Yohann, Wan, Jing, Fonteneau, Pascal, Fenouillet-Beranger, Claire, Le Royer, Cyrille, Zaslavsky, Alexander, Ferrari, Philippe, Cristoloveanu, Sorin

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Z super(2)-FET: A promising FDSOI device for ESD protection von Solaro, Yohann, Wan, Jing, Fonteneau, Pascal, Fenouillet-Beranger, Claire, Le Royer, Cyrille, Zaslavsky, Alexander, Ferrari, Philippe, Cristoloveanu, Sorin

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PHOTODIODE AND FABRICATION METHOD OF A PHOTODIODE von RODRIGUES GONCALVES, Boris, FONTENEAU, Pascal

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Simulation of Indirect Time-of-flight Pixel Using High Frequency Operation Low Voltage Trench Gates von Lopes, Bruno Henrique, Fonteneau, Pascal, Goncalves, Boris Rodrigues, Mugny, Gabriel, Vignetti, Matteo, Bawedin, Maryline, Kaminski, Anne

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Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain von Manouvrier, Jean-Robert, Fonteneau, Pascal, Legrand, Charles-Alexandre, Nouet, Pascal, Azaïs, Florence

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Overvoltage protection components in an optoelectronic circuit on SOI von Fonteneau Pascal

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Assembly of integrated circuit chips having an overvoltage protection component von Fonteneau Pascal

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ASSEMBLY OF INTEGRATED CIRCUIT CHIPS HAVING AN OVERVOLTAGE PROTECTION COMPONENT von Fonteneau Pascal

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Overvoltage protection component and an assembly of integrated circuit chips having said overvoltage protection component von FONTENEAU PASCAL

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Inverting circuit von Fonteneau, Pascal, El Dirani, Hassan

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PHOTODIODE COMPRISING A MEMORY AREA von RODRIGUES GONCALVES, Boris, TOURNIER, Arnaud, FONTENEAU, Pascal, LALANNE, Frederic

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CIRCUIT INVERSEUR von EL DIRANI, HASSAN, FONTENEAU, PASCAL

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Modeling a SCR-based protection structure for RF-ESD co-design simulations von Romanescu, A., Ferrari, P., Arnould, J-D, Fonteneau, P., Legrand, C-A

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