dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors von Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

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Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes von Khanna, Rohit, Ip, K., Allums, K. K., Baik, K., Abernathy, C. R., Pearton, S. J., Heo, Y. W., Norton, D. P., Ren, F., Dwivedi, R., Fogarty, T. N., Wilkins, R.

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Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process von Lenahan, P.M., Mishima, T.D., Jumper, J., Fogarty, T.N., Wilkins, R.T.

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Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface von Lenahan, P. M., Mishima, T. D., Fogarty, T. N., Wilkins, R.

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Effects of high energy proton irradiation on DC performance of GaAs metal-semiconductor field effect transistors von LUO, B, JOHNSON, J. W, REN, F, ALLUMS, K. K, ABERNATHY, C. R, PEARTON, S. J, DWIVEDI, R, FOGARTY, T. N, WILKINS, R

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Proton and gamma-ray irradiation effects on InGaP/GaAs heterojunction bipolar transistors von LUO, B, JOHNSON, J. W, REN, F, ALLUMS, K. K, ABERNATHY, C. R, PEARTON, S. J, DWIVEDI, R, FOGARTY, T. N, WILKINS, R, SCHOENFELD, D

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Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes von Khanna, Rohit, Allums, K.K., Abernathy, C.R., Pearton, S.J., Kim, Jihyun, Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R., Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, Center for Applied Radiation Research, Prairie View A and M University, Prairie View, Texas 77446

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Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes von Allums, K.K., Hlad, M., Gerger, A.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R.

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High energy proton irradiation effects on SiC Schottky rectifiers von Nigam, S., Kim, Jihyun, Ren, F., Chung, G. Y., MacMillan, M. F., Dwivedi, R., Fogarty, T. N., Wilkins, R., Allums, K. K., Abernathy, C. R., Pearton, S. J., Williams, J. R.

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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors von Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

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Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors von Luo, B., Kim, Jihyun, Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R.

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Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes von Khanna, Rohit, Allums, K. K., Abernathy, C. R., Pearton, S. J., Kim, Jihyun, Ren, F., Dwivedi, R., Fogarty, T. N., Wilkins, R.

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A nuclear fragmentation energy deposition model von Ngo, D.M., Wilson, J.W., Forgarty, T.N., Buck, W.W.

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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors von Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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Application of radiation sources to simulate the radiation environment in low earth orbit: results on optoelectronic devices for International Space Station von Wilkins, R, Ardalan, Shojah S, Fogarty, T.N

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Single event upset and total dose radiation effects on rad-hard SRAMs von ZAJIC, V, KLOESEL, K, NGO, D, KIBUULE, P. M, OLADIPUPO, A, FOGARTY, T. N, KOHLER, R. A, STASSINOPULOS, E. G

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Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors von Wilkins, R., Shojah-Ardalan, S., Kirk, W.P., Spencer, G.F., Bate, R.T., Seabaugh, A.C., Lake, R., Stelmaszyk, P., Wieck, A.D., Fogarty, T.N.

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Effect of proton irradiation on interface state density in Sc2O3/GaN and Sc2O3/MgO/GaN diodes: Group III Nitrides, SiC and ZnO von ALLUMS, K. K, HLAD, M, GERGER, A. P, GILA, B. P, ABERNATHY, C. R, PEARTON, S. J, REN, F, DWIVEDI, R, FOGARTY, T. N, WILKINS, R

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Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs von Luo, B, Kim, J, Ren, E, Baca, A G, Briggs, R D, Gila, B P, Onstine, A H, Allums, K K, Abernathy, C R, Pearton, S J

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High-energy proton irradiation effects on AIGaN/GaN high-electron mobility transistors von Luo, B, Johnson, J W, Ren, F, Allums, K K

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