Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface von Vishwanath, V., Demenev, E., Giubertoni, D., Vanzetti, L., Koh, A.L., Steinhauser, G., Pepponi, G., Bersani, M., Meirer, F., Foad, M.A.

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CH4/H2 - A UNIVERSAL REACTIVE ION ETCH FOR II-VI SEMICONDUCTORS von FOAD, MA, WILKINSON, CDW, DUNSCOMB, C, WILLIAMS, RH

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MODEL FOR CONDUCTANCE IN DRY-ETCH DAMAGED N-GAAS STRUCTURES von RAHMAN, M, JOHNSON, NP, FOAD, MA, LONG, AR, HOLLAND, MC, WILKINSON, CDW

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Optimization of advanced PMOS junctions using Ge, B and F co-implants von Graoui, H., Hilkene, M., McComb, B., Castle, M., Felch, S., Al-Bayati, A., Tjandra, A., Foad, M.A.

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Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4 von Cheung, R, Thoms, S, Watt, M, Foad, M A, Sotomayor-Torres, C M, Wilkinson, C D W, Cox, U J, Cowley, R A, Dunscombe, C, Williams, R H

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High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering von Foad, M A, Watt, M, Smart, A P, Torres, C M Sotomayro, Wilkinson, C D W, Kuhn, W, Wagner, H P, Bauer, S, Leiderer, H, Gebhardt, W

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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface von Vishwanath, V, Demenev, E, Giubertoni, D, Vanzetti, L, Koh, A. L, Steinhauser, G, Pepponi, G, Bersani, M, Meirer, F, Foad, M. A

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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants von Felch, S.B., Foad, M.A., Olsen, C., Nouri, F., Matsunaga, Y., Natsuaki, N.

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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants von Graoui, H., Conti, G., Hilkene, M., McComb, B., Tjandra, A., Foad, M.A., Kouzminov, D., Hunter, J., Hitzman, C.J., Evans, C.A.

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Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co-Implants and Spike Anneal in 65nm PMOS Devices von Li, C I, Wang, H Y, Chien, C C, Chain, M, Yang, C L, Tzou, S F, Graoui, H, Foad, M A, Ting, Richard

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Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization von Torres, CM.Sotomayor, Smart, A. P., Watt, M., Foad, M. A., Tsutsui, K., Wilkinson, C. D. W.

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Deactivation of low energy Boron Implants into Pre-amorphised Si after Non-Melt Laser Annealing with Multiple Scans von Sharp, J A, Cowern, N E B, Webb, R P, Giubertoni, D, Gennaro, S, Bersani, M, Foad, M A, Kirkby, K J

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Elemental B distributions and clustering in low-energy B+ ion-implanted Si von Wang, T.-S., Cullis, A. G., Collart, E. J. H., Murrell, A. J., Foad, M. A.

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Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures von Foad, M.A., Smart, A.P., Watt, M., Sotomayor Torres, C.M., Kuhn, W., Wagner, H.P., Leiderer, H., Bauer, S., Wilkinson, C.D.W., Gebhardt, W., Razeghi, M.

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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans von Sharp, J. A., Cowern, N. E. B., Webb, R. P., Kirkby, K. J., Giubertoni, D., Gennaro, S., Bersani, M., Foad, M. A., Cristiano, F., Fazzini, P. F.

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The production and use of ultralow energy ion beams von Goldberg, R. D., Armour, D. G., van den Berg, J. A., Cook, C. E. A., Whelan, S., Zhang, S., Knorr, N., Foad, M. A., Ohno, H.

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Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation von De Salvador, D., Bisognin, G., Di Marino, M., Napolitani, E., Carnera, A., Graoui, H., Foad, M. A., Boscherini, F., Mirabella, S.

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Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs von WANG, P. D, FOAD, SOTOMAYOR-TORRES, C. M, THOMS, S, ATT, M, CHEUNG, R, WILKINSON, C. D. W, BEAUMONT, S. P

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Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing von Sharp, J. A., Smith, A. J., Webb, R. P., Kirkby, K. J., Cowern, N. E. B., Giubertoni, D., Gennaro, S., Bersani, M., Foad, M. A., Fazzini, P. F., Cristiano, F.

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An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing von Giubertoni, D., Pepponi, G., Bersani, M., Gennaro, S., D’Acapito, F., Doherty, R., Foad, M.A.

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