Investigation of Program Saturation in Scaled Interpoly Dielectric Floating-Gate Memory Devices von Beug, M.F., Chan, N., Hoehr, T., Mueller-Meskamp, L., Specht, M.

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Bridge Amplifier Linearity Investigation with a Cascaded Inductive Voltage Divider Setup von Beug, M. Florian, Moser, Harald, Kölling, Axel

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A New Calibration Transformer and Measurement Setup for Bridge Standard Calibrations Up To 5 kHz von Beug, M. Florian, Kolling, Axel, Moser, Harald

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Setup for the dynamic calibration of bridge amplifiers from DC up to 10 kHz von Klaus, Leonard, Beug, M. Florian, Bruns, Thomas

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TaN and Al2O3 Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS NAND Flash Memory Cells von FLORIAN BEUG, M, MELDE, Thomas, PAUL, Jan, KNOEFLER, Roman

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Analysis of TANOS Memory Cells With Sealing Oxide Containing Blocking Dielectric von Florian Beug, M, Melde, Thomas, Czernohorsky, Malte, Hoffmann, Raik, Paul, Jan, Knoefler, Roman, Tilke, Armin T

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Dynamic calibration of carrier frequency bridge amplifiers von Klaus, Leonard, Beug, M. Florian

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Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells von Beug, M F, Tempel, G, Hofmann, K R

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Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells von Beug, M Florian, Rafhay, Quentin, van Duuren, Michiel J, Duane, Russell

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TaN and \hbox\hbox Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells von Beug, M F, Melde, T, Paul, J, Knoefler, R

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Improved dynamic bridge standard as universal tool for bridge amplifier characterisation and calibration von Beug, M. Florian, Moser, Harald, Hinz, Michael, Kölling, Axel

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Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and refe... von Rafhay, Quentin, Beug, M. Florian, Duane, Russell

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Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides von Florian Beug, M., Ferretti, Rüdiger, Hofmann, Karl R.

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TaN and [Formula Omitted] Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells von Beug, M. Florian, Melde, Thomas, Paul, Jan, Knoefler, Roman

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Dynamic bridge standard for strain gauge bridge amplifier calibration von Beug, M. F., Moser, H., Ramm, G.

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Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices von Duane, R., Beug, M.F., Mathewson, A.

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Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor von Duane, R., Rafhay, Q., Beug, M.F., van Duuren, M.

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A modified constant field charge pumping method for sensitive profiling of near-junction charges von von Emden, W., Krautschneider, W., Tempel, G., Hagenbeck, R., Beug, M.F.

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Nitride Thickness Scaling Limitations in TANOS Charge Trapping Devices von Melde, T., Beug, M.F., Bach, L., Riedel, S., Ludwig, C., Mikolaijck, T.

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Accurate program simulation of TANOS charge trapping devices von Melde, T., Beug, M.F., Bach, L., Riedel, S., Chan, N., Ludwig, C., Mikolajick, T.

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