USE OF ERYTHROCYTIC CONTAINERS FOR DELIVERY OF MEDICINES TO THE INFLAMMATION SITE von Churpiy, І. К., Golod, N. R., Yaniv, О. V., Fedorivska, L. P., Fitsych, M. V., Macogin, А. Р.

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures von Izhnin, I. I., Mynbaev, K. D., Voitsekhovskii, A. V., Korotaev, A. G., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Fitsych, O. I., Swiatek, Z., Jakiela, R.

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis von Izhnin, I I, Syvorotka, I I, Fitsych, O I, Varavin, V S, Dvoretsky, S A, Marin, D V, Mikhailov, N N, Remesnik, V G, Yakushev, M V, Mynbaev, K D, Voitsekhovsky, A V, Korotaev, A G

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te von Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Fitsych, O.I., Swiatek, Z., Jakiela, R.

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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te von Izhnin, I.I., Mynbaev, K.D., Swiatek, Z., Morgiel, J., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Marin, D.V., Yakushev, M.V., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V.

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.

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TEM studies of structural defects in HgTe/HgCdTe quantum wells von Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V.

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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE von Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V., Świątek, Z., Morgiel, J.

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Single-photon avalanche diode detectors based on group IV materials von Izhnin, Ihor I., Lozovoy, Kirill A., Kokhanenko, Andrey P., Khomyakova, Kristina I., Douhan, Rahaf M. H., Dirko, Vladimir V., Voitsekhovskii, Alexander V., Fitsych, Olena I., Akimenko, Nataliya Yu

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Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots von Izhnin, Ihor I., Fitsych, Olena I., Pishchagin, Anton A., Kokhanenko, Andrei P., Voitsekhovskii, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I.

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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy von Bonchyk, O. Yu, Savytskyy, H. V., Izhnin, I. I., Mynbaev, K. D., Syvorotka, I. I., Korotaev, A. G., Voitsekhovskii, A. V., Fitsych, O. I., Varavin, V. S., Marin, D. V., Mikhailov, N. N., Yakushev, M. V., Swiatek, Z., Morgiel, J., Jakiela, R.

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Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic von Izhnin, I. I., Dvoretsky, S. A., Mynbaev, K. D., Fitsych, O. I., Mikhailov, N. N., Varavin, V. S., Pociask-Bialy, M., Voitsekhovskii, A. V., Sheregii, E.

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Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films von Izhnin, I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Swiatek, Z., Morgiel, J., Fitsych, O. I., Varavin, V. S., Marin, D. V., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V.

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Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates von Izhnin, I.I., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Bonchyk, A.Yu, Savytskyy, H.V., Mynbaev, K.D., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Jakiela, R.

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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study von Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Marin, D. V., Yakushev, M. V.

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Properties of arsenic–implanted Hg1-xCdxTe MBE films von Izhnin, Igor I, Voitsekhovskii, Alexandr V, Korotaev, Alexandr G, Fitsych, Olena I, Oleksandr Yu Bonchyk, Savytskyy, Hrygory V, Mynbaev, Karim D, Varavin, Vasilii S, Dvoretsky, Sergey A, Yakushev, Maxim V, Jakiela, Rafal, Trzyna, Malgorzata

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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates von Izhnin, I I, Izhnin, A I, Savytskyy, H V, Vakiv, M M, Stakhira, Y M, Fitsych, O E, Yakushev, M V, Sorochkin, A V, Sabinina, I V, Dvoretsky, S A, Sidorov, Yu G, Varavin, V S, Pociask-Bialy, M, Mynbaev, K D

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Background donor concentration in HgCdTe von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Pociask−Bialy, M., Dvoretsky, S.A.

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Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films von Izhnin, I. I., Fitsych, E. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Bonchyk, A. Yu, Savytskyy, H. V., Świątek, Z.

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