Imperfect two-dimensional topological insulator field-effect transistors von Vandenberghe, William G., Fischetti, Massimo V.

Volltext

Figure of merit for and identification of sub-60 mV/decade devices von Vandenberghe, William G., Verhulst, Anne S., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Smets, Quentin, Heyns, Marc, Fischetti, Massimo V.

Volltext

Theoretical analysis of high-field transport in graphene on a substrate von Serov, Andrey Y., Ong, Zhun-Yong, Fischetti, Massimo V., Pop, Eric

Volltext

Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations von Jingtian Fang, Reaz, Mahmud, Weeden-Wright, Stephanie L., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T.

Volltext

The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials von Brahma, Madhuchhanda, Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V., Vandenberghe, William G.

Volltext

Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation von Seonghoon Jin, Ting-Wei Tang, Fischetti, M.V.

Volltext

Thermalization of radiation-induced electrons in wide-bandgap materials: A first-principles approach von Nielsen, Dallin O., Fischetti, Massimo V.

Volltext

Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors von Kim, Jiseok, Fischetti, Massimo V.

Volltext

Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches von Lee, Yeonghun, Yao, Xiaolong, Fischetti, Massimo, Cho, Kyeongjae

Volltext

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity von Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei

Volltext

Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene von Gaddemane, Gautam, Vandenberghe, William G., Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V.

Volltext

Depression of the normal-superfluid transition temperature in gated bilayer graphene von Fischetti, Massimo V.

Volltext

Advanced Physics of Electron Transport in Semiconductors and Nanostructures von Fischetti, Massimo V

Volltext

The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors von Pantelides, Sokrates T., Walker, D. Greg, Reaz, Mahmud, Fischetti, Massimo V., Schrimpf, Ronald D.

Volltext

Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcoge... von Gaddemane, Gautam, Gopalan, Sanjay, Van de Put, Maarten L., Fischetti, Massimo V.

Volltext

Deformation potentials for band-to-band tunneling in silicon and germanium from first principles von Vandenberghe, William G., Fischetti, Massimo V.

Volltext

Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors von Fischetti, Massimo V., Bo Fu, Vandenberghe, William G.

Volltext

Impact of field-induced quantum confinement in tunneling field-effect devices von Vandenberghe, William G., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Fischetti, Massimo V.

Volltext

An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons von Fischetti, Massimo V., Narayanan, Sudarshan

Volltext

Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors von Fang, Jingtian, Vandenberghe, William G., Fu, Bo, Fischetti, Massimo V.

Volltext