Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs von Seonghoon Jin, Fischetti, M.V., Ting-Wei Tang

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Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length von Fischetti, M.V., O'Regan, T.P., Sudarshan Narayanan, Sachs, C., Seonghoon Jin, Jiseok Kim, Yan Zhang

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation von Seonghoon Jin, Ting-Wei Tang, Fischetti, M.V.

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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation von Seonghoon Jin, Fischetti, M.V., Ting-wei Tang

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Scaling MOSFETs to the Limit: A Physicists's Perspective von Fischetti, M.V.

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Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation von Laux, S.E., Kumar, A., Fischetti, M.V.

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Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates von Ragnarsson, L.-A., Guha, S., Bojarczuk, N.A., Cartier, E., Fischetti, M.V., Rim, K., Karasinski, J.

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Does Circulation in Individual Current States Survive in the Total Current Density? von Laux, S.E., Kumar, A., Fischetti, M.V.

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Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K von Laux, S.E., Fischetti, M.V.

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A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon von Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Iizuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Hongchin Lin, Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Ting-Wei Tang, Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Shiuh-Luen Wang, Xiaolin Wang, Chiang-Sheng Yao, Yoder, P.D., Yoshii, A.

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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers von Zhang, Yang, Fischetti, M.V, Soree, B, Magnus, W, Heyns, Marc, Meuris, M

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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport von Fischetti, M.V.

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Charge trapping in high k gate dielectric stacks von Zafar, S., Callegari, A., Gusev, E., Fischetti, M.V.

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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET's von Fischetti, M.V., Laux, S.E.

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Hot electrons in SiO2: ballistic to steady-state transport von Fischetti, M.V., DiMaria, D.J.

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Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies von Tsang, J.C., Fischetti, M.V.

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Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors von Fischetti, M.V., Laux, S.E.

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Dual stress liner enhancement in hybrid orientation technology von Sheraw, C.D., Yang, M., Fried, D.M., Costrini, G., Kanarsky, T., Lee, W.-H., Chan, V., Fischetti, M.V., Holt, J., Black, L., Naeem, M., Panda, S., Economikos, L., Groschopf, J., Kapur, A., Li, Y., Mo, R.T., Bonnoit, A., Degraw, D., Luning, S., Chidambarrao, D., Wang, X., Bryant, A., Brown, D., Sung, C.-Y., Agnello, P., Ieong, M., Huang, S.-F., Chen, X., Khare, M.

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Electrical characterization of Al 2 O 3 n-channel MOSFETs with aluminum gates von Ragnarsson, L.-A., Guha, S., Bojarczuk, N.A., Cartier, E., Fischetti, M.V., Rim, K., Karasinski, J.

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