On the enhanced electron mobility in strained-silicon inversion layers von Fischetti, M. V., Gámiz, F., Hänsch, W.

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Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures von Fischetti, M. V.

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Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion von Gamiz, F., Fischetti, M. V.

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Intrinsic broadening of the mobility spectrum of bulk n-type GaAs von Jolley, G, Umana-Membreno, G A, Akhavan, N D, Antoszewski, J, Faraone, L, Fischetti, M V

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Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects von Laux, S. E., Kumar, A., Fischetti, M. V.

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Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability von Fischetti, M. V., Laux, S. E.

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“Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? von Fischetti, M. V., Yoder, P. D., Khatami, M. M., Gaddemane, G., Van de Put, M. L.

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Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model von Fischetti, M. V., Jin, S., Tang, T.-W., Asbeck, P., Taur, Y., Laux, S. E., Rodwell, M., Sano, N.

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Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness von Fischetti, M. V., Ren, Z., Solomon, P. M., Yang, M., Rim, K.

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Fundamental limitations of hot-carrier solar cells von Kirk, A. P., Fischetti, M. V.

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Theory of electron transport in small semiconductor devices using the Pauli master equation von Fischetti, M. V.

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Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations von Greene-Diniz, Gabriel, Fischetti, M. V., Greer, J. C.

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Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate von Gámiz, F., Fischetti, M. V.

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Erratum: “Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations” [J. Appl. Phys. 119, 055707 (2016)] von Greene-Diniz, Gabriel, Fischetti, M. V., Greer, J. C.

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Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys von Fischetti, M. V., Laux, S. E.

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Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices von Vyas, P. B., Naquin, C., Edwards, H., Lee, M., Vandenberghe, W. G., Fischetti, M. V.

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers von Zhang, Yan, Kim, Jiseok, Fischetti, M. V.

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Physical modeling of strain-dependent hole mobility in Ge p -channel inversion layers von Zhang, Y., Fischetti, M. V., Sorée, B., Magnus, W., Heyns, M., Meuris, M.

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Monte Carlo study of electron transport in silicon inversion layers von FISCHETTI, M. V, LAUX, S. E

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