Monte Carlo Study of Electronic Transport in Monolayer InSe von Gopalan, Sanjay, Gaddemane, Gautam, Put, Maarten L Van de, Fischetti, And Massimo V

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Imperfect two-dimensional topological insulator field-effect transistors von Vandenberghe, William G., Fischetti, Massimo V.

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Theory of interfacial plasmon-phonon scattering in supported graphene von Ong, Zhun-Yong, Fischetti, Massimo V.

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Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches von Lee, Yeonghun, Yao, Xiaolong, Fischetti, Massimo, Cho, Kyeongjae

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Thermalization of radiation-induced electrons in wide-bandgap materials: A first-principles approach von Nielsen, Dallin O., Fischetti, Massimo V.

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Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors von Kim, Jiseok, Fischetti, Massimo V.

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Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials von Van de Put, Maarten L., Fischetti, Massimo V., Vandenberghe, William G.

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Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation von Seonghoon Jin, Ting-Wei Tang, Fischetti, M.V.

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Figure of merit for and identification of sub-60 mV/decade devices von Vandenberghe, William G., Verhulst, Anne S., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Smets, Quentin, Heyns, Marc, Fischetti, Massimo V.

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Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview von Gaddemane, Gautam, Vandenberghe, William G., Van de Put, Maarten L., Chen, Shanmeng, Tiwari, Sabyasachi, Chen, Edward, Fischetti, Massimo V.

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Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity von Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei

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Image-force barrier lowering in top- and side-contacted two-dimensional materials von Deylgat, Emeric, Chen, Edward, Fischetti, Massimo V., Sorée, Bart, Vandenberghe, William G.

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Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene von Gaddemane, Gautam, Vandenberghe, William G., Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V.

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Theoretical analysis of high-field transport in graphene on a substrate von Serov, Andrey Y., Ong, Zhun-Yong, Fischetti, Massimo V., Pop, Eric

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The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials von Brahma, Madhuchhanda, Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V., Vandenberghe, William G.

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Depression of the normal-superfluid transition temperature in gated bilayer graphene von Fischetti, Massimo V.

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The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors von Pantelides, Sokrates T., Walker, D. Greg, Reaz, Mahmud, Fischetti, Massimo V., Schrimpf, Ronald D.

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Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcoge... von Gaddemane, Gautam, Gopalan, Sanjay, Van de Put, Maarten L., Fischetti, Massimo V.

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry von Fischetti, Massimo V., Vandenberghe, William G.

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