Impact of Breakdown Voltage on Gamma Irradiation Effects in 0.13- \mu \text and 0.25- \mu \text SiGe HBTs von Schmidt, Jens, Korn, Julian, Fischer, Gerhard G., Sorge, Roland

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A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche Area in SiGe von Yaoming Sun, Fischer, G. G., Scheytt, J. C.

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology von Fox, Alexander, Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Fischer, Gerhard G., Wipf, Christian, Marschmeyer, Steffen, Aufinger, Klaus, Bock, Josef, Boguth, Sabine, Knapp, Herbert, Lachner, Rudolf, Liebl, Wolfgang, Manger, Dirk, Meister, Thomas F., Pribil, Andreas, Wursthorn, Jonas

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Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model von Mukherjee, Chhandak, Jacquet, Thomas, Fischer, Gerhard G., Zimmer, Thomas, Maneux, Cristell

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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps von Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

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(Invited) Reliability of SiGe HBTs in Long-Term Operation von Fischer, Gerhard G.

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Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs von Kumar, Khamesh, Chakravorty, Anjan, Fischer, Gerhard G., Wipf, Christian

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Ohmic contacts on p-GaN (Part I):: investigation of different contact metals and their thermal treatment von Wenzel, Roland, Fischer, Gerhard G, Schmid-Fetzer, Rainer

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Ohmic contacts on p-GaN (Part II):: impact of semiconductor fabrication and surface treatment von Wenzel, Roland, Fischer, Gerhard G, Schmid-Fetzer, Rainer

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SiGe:C BiCMOS Technologies for Automotive Radar Applications von Fischer, Gerhard G., Glisic, Srdjan

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Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation von Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

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The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology von Diestelhorst, R.M., Finn, S., Bongim Jun, Sutton, A.K., Peng Cheng, Marshall, P.W., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps von Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps von Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

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A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting von RÜCKER, Holger, HEINEMANN, Bernd, KNOLL, Dieter, KORNDÖRFER, Falk, MAI, Andreas, MARSCHMEYER, Steffen, SCHLEY, P, SCHMIDT, D, SCHMIDT, J, ANDREAS SCHUBERT, Markus, SCHULZ, K, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, D, YAMAMOTO, Yuji, BARTH, R, BORNGRÄBER, J, DREWS, J, FISCHER, Gerhard G, FOX, Alexander, GRABOLLA, Thomas, HAAK, U

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(Invited) Reliability of SiGe HBTs in Long-Term Operation von Fischer, Gerhard G.

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Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications von Weimer, Christoph, Fischer, Gerhard G., Schroter, Michael

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A comparison of npn vs. pnp SiGe HBT oscillator phase noise performance in a complementary SiGe platform von Horst, S J, Chakraborty, P, Saha, P, Cressler, J D, Gustat, H, Heinemann, B, Fischer, G G, Knoll, D, Tillack, B

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Ohmic contacts on p-GaN (Part II) von Wenzel, Roland, Fischer, Gerhard G, Schmid-Fetzer, Rainer

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Ohmic contacts on p-GaN (Part I) von Wenzel, Roland, Fischer, Gerhard G, Schmid-Fetzer, Rainer

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