Decreased physical activity among head start children with a history of wheezing : Use of an accelerometer to measure activity von FIRRINCIELI, Vincent, KELLER, Adrienne, EHRENSBERGER, Ryan, PLATTS-MILLS, James, SHUFFLEBARGER, Cindy, GELDMAKER, Bethany, PLATTS-MILLS, Thomas

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Decreased physical activity among headstart children with a history of wheezing: Use of an accelerometer to measure activity von Firrincieli, Vincent, Keller, Adrienne, Ehrensberger, Ryan, Platts-Mills, James, Shufflebarger, Cindy, Geldmaker, Bethany, Platts-Mills, Thomas

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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors von Vincent, B., Shimura, Y., Takeuchi, S., Nishimura, T., Eneman, G., Firrincieli, A., Demeulemeester, J., Vantomme, A., Clarysse, T., Nakatsuka, O., Zaima, S., Dekoster, J., Caymax, M., Loo, R.

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Study of ohmic contacts to n-type Ge: Snowplow and laser activation von Firrincieli, A., Martens, K., Rooyackers, R., Vincent, B., Rosseel, E., Simoen, E., Geypen, J., Bender, H., Claeys, C., Kittl, J. A.

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Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation von Martens, Koen, Rooyackers, R., Firrincieli, A., Vincent, B., Loo, R., De Jaeger, B., Meuris, M., Favia, P., Bender, H., Douhard, B., Vandervorst, W., Simoen, E., Jurczak, M., Wouters, D. J., Kittl, J. A.

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GeSn channel nMOSFETs: Material potential and technological outlook von Gupta, S., Vincent, B., Lin, D. H. C., Gunji, M., Firrincieli, A., Gencarelli, F., Magyari-Kope, B., Yang, B., Douhard, B., Delmotte, J., Franquet, A., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K. C.

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Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts von Vincent, B., Firrincieli, A., Wang, W.-E., Waldron, N., Franquet, A., Douhard, B., Vandervorst, W., Clarysse, T., Brammertz, G., Loo, R., Dekoster, J., Meuris, M., Caymax, M.

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Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth von Firrincieli, A., Vincent, B., Waldron, N., Simoen, E., Claeys, C., Kittl, J.

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Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment von Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Vincent, Benjamin, Firrincieli, Andrea, Winderick, Gillis, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Mitard, Jerome, Wang, Wei-E, Heyns, Marc, Caymax, Matty, Meuris, Marc, Absil, Philippe, Hoffmann, Thomas

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Contact resistivity and Fermi-level pinning in n-type Ge contactswith epitaxial Si-passivation von Martens, Koen, Rooyackers, R., Firrincieli, A., Vincent, B., Loo, R., De Jaeger, B., Meuris, M., Favia, P., Bender, H., Douhard, B., Vandervorst, W., Simoen, E., Jurczak, M., Wouters, D. J., Kittl, J. A.

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Record low contact resistivity to n-type Ge for CMOS and memory applications von Martens, K, Firrincieli, A, Rooyackers, R, Vincent, B, Loo, R, Locorotondo, S, Rosseel, E, Vandeweyer, T, Hellings, G, De Jaeger, B, Meuris, M, Favia, P, Bender, H, Douhard, B, Delmotte, J, Vandervorst, W, Simoen, E, Jurczak, G, Wouters, D, Kittl, J A

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CVD Epitaxial Growth of GeSn Opens a New Route for Advanced Sn-Based Logic and Photonics Devices von Vincent, B., Gencarelli, F., Kumar, A., Vantomme, A., Merckling, C., Lin, D., Afanasiev, V., Eneman, G., Clarysse, T., Firrincieli, A., Gassenq, A., Vandervorst, W., Dekoster, J., Loo, R., Caymax, M.

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Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment von Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Vincent, Benjamin, Firrincieli, Andrea, Winderick, Gillis, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Mitard, Jerome, Wang, Wei-E, Heyns, Marc, Caymax, Matty, Meuris, Marc, Absil, Philippe, Hoffmann, Thomas

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III-V Devices for Advanced CMOS von Waldron, Niamh, Nguyen, Duy, Lin, Dennis, Brammertz, Guy, Hellings, Geert, Vincent, Benjamin, Firrincieli, Andrea, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Krom, Raymond, Mitard, Jerome, Wang, Wei-E, Passlack, Matthias, Heyns, Marc, Caymax, Matty, Meuris, Marc, Biesemans, Serge, Hoffman, Thomas

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Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment von Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Vincent, Benjamin, Firrincieli, Andrea, Winderickx, Gillis, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Mitard, Jérôme, Wang, Wei-E, Heyns, Marc, Caymax, Matty, Meuris, Marc, Absil, Philippe, Hoffman, Thomas

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III-V Devices for Advanced CMOS von Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Hellings, Geert, Vincent, Benjamin, Firrincieli, Andrea, Sioncke, Sonia, De Jaeger, Brice, Wang, Gang, Krom, Raymond, Mitard, Jérôme, Wang, Wei-E, Passlack, Matthias, Heyns, Marc, Caymax, Matty, Meuris, Marc, Biesemans, Serge, Hoffmann, Thomas

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