Near field optical behaviour of C supertips von Castagné, M., Benfedda, M., Lahimer, S., Falgayrettes, P., Fillard, J.P.

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Optical properties of silicon-nitride atomic-force-microscopy tips in scanning tunneling optical microscopy: experimental study von Castagne, M, Prioleau, C, Fillard, J P

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A new approach to the similarity relations in the fuzzy set theory von Faurous, P., Fillard, J.P.

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Atomic force microscopy silicon tips as photon tunneling sensors: a resonant evanescent coupling experiment von Fillard, J P, Castagne, M, Prioleau, C

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A study of semiconductor surfaces and devices by coupled IR photon tunneling and atomic-force microscopy von Gall-Borrut, P., Castagne, M., Weyher, J.L., Fillard, J.P., Bonnafe, J.

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Qualification by optical means of CdTe substrates von Triboulet, R., Durand, A., Gall, P., Bonnafé, J., Fillard, J.P., Krawczyk, S.K.

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Microtomography observation of precipitates in semi-insulating GaAs materials von GALL, P, FILLARD, J. P, CASTAGNE, M, WEYHER, J. L, BONNAFE, J

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Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomography von Fillard, J.P.

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Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure von Manifacier, J.C., De Murcia, M., Fillard, J.P., Vicario, E.

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Near infrared dark-field microscopy with video for studying defects in III-V compound materials von Montgomery, P C, Fillard, J P

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Non-destructive optical inspection of evaporated fluoride glass layers von Montgomery, P.C., Montaner, D., Jacoboni, C., Boulard, B., Fillard, J.P.

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High resolution and sensitivity infrared tomography von Fillard, J.P., Montgomery, P.C., Gall, P., Castagné, M., Bonnafé, J.

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Analysis of transient phenomena in GaAs within the metastable model von Santic, B., Radic, N., Desnica, U. V., Fillard, J. P.

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Phase-stepping microscopy (PSM): a qualification tool for electronic and optoelectronic devices von Montgomery, P C, Fillard, J P, Castagne, M, Montaner, D

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Direct evidence for a charge-controlled dipolar structure of the EL2 complex center in semi-insulating GaAs von FILLARD, J. P, BONNAFE, J, CASTAGNE, M

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Laser-scanning tomography: a survey of recent investigations in semiconductor materials von Fillard, J P, Gall, P, Bonnafe, J, Castagne, M, Ogawa, T

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Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments von Weyher, J L, Gall, P, Dang, Le Si, Fillard, J P, Bonnafe, J, Rufer, H, Baumgartner, M, Lohnert, K

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LST-detected microprecipitates and their role in the performance of GaAs integrated circuits von Castagne, M, Fillard, J P, Achvar, D, Gall, P

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Thermal regeneration of the EL2 center unquenched configuration in semi-insulating GaAs von Fillard, J. P., Bonnafe, J., Castagne, M.

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Defect structures in InP crystals by laser scanning tomography von FILLARD, J. P, GALL, P, BAROUDI, A, GEORGE, A, BONNAFE, J

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