An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale von Makarem, Raghda, Cristiano, Filadelfo, Muller, Dominique, Fazzini, Pier Francesco

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β‐Disubstituted Pentacene Derivatives: Thin Film Structural Properties and Four‐Probe Field Effect Mobility von Aliouat, Mouaad‐Yassine, Cristiano, Filadelfo, Abbassi, Lydia, Escoubas, Stéphanie, Mesnilgrente, Fabien, Salvagnac, Ludovic, Šámal, Michal, Rybáček, Jiří, Sturm, Ludmilla, Gourdon, André, Jančařík, Andrej, Séguy, Isabelle

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Insight of surface treatments for CMOS compatibility of InAs nanowires von Dhungana, Daya S., Hemeryck, Anne, Sartori, Nicolo, Fazzini, Pier-Francesco, Cristiano, Filadelfo, Plissard, Sébastien R.

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Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate von Lecestre, Aurélie, Martin, Mickael, Cristiano, Filadelfo, Baron, Thierry, Larrieu, Guilhem

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− xGex and Si layers von Daubriac, Richard, Scheid, Emmanuel, Rizk Hiba, Monflier, Richard, Joblot Sylvain, Beneyton Rémi, Acosta, Alba Pablo, Kerdilès Sébastien, Filadelfo, Cristiano

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Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing von Fisicaro, Giuseppe, Pelaz, Lourdes, Aboy, Maria, Lopez, Pedro, Italia, Markus, Huet, Karim, Cristiano, Filadelfo, Essa, Zahi, Yang, Qui, Bedel-Pereira, Elena, Quillec, Maurice, La Magna, Antonino

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Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study von Sadek, Dima, Jay, Antoine, El Hila, Jihan, Gravelier, Quentin, Arnoult, Alexandre, Demoulin, Rémi, Cristiano, Filadelfo, Plissard, Sébastien, Hémeryck, Anne

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Hyper-Doped Silicon Nanoantennas and Metasurfaces for Tunable Infrared Plasmonics von Poumirol, Jean-Marie, Majorel, Clément, Chery, Nicolas, Girard, Christian, Wiecha, Peter R, Mallet, Nicolas, Monflier, Richard, Larrieu, Guilhem, Cristiano, Filadelfo, Royet, Anne-Sophie, Alba, Pablo Acosta, Kerdiles, Sébastien, Paillard, Vincent, Bonafos, Caroline

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1- x Ge x and Si layers von Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1-x Ge x and Si layers von Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo

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The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys von Laânab, Larbi, Belafhaili, Amine, Cristiano, Filadelfo, Cherkashin, Nikolay, Claverie, Alain

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A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon von Ortiz, Christophe J., Pichler, Peter, Fühner, Tim, Cristiano, Filadelfo, Colombeau, Benjamin, Cowern, Nicholas E. B., Claverie, Alain

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Detailed arsenic concentration profiles at Si/SiO2 interfaces von Pei, Lirong, Duscher, Gerd, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, Windl, Wolfgang

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Overlayer stress effects on defect formation in Si and Ge von Cowern, Nick E.B., Bennett, Nick S., Ahn, Chihak, Yoon, Joo Chul, Hamm, Silke, Lerch, Wilfried, Kheyrandish, Hamid, Cristiano, Filadelfo, Pakfar, Ardechir

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Thermal evolution of extended defects in implanted Si von Claverie, Alain, Colombeau, Benjamin, Ben Assayag, Gérard, Bonafos, Caroline, Cristiano, Filadelfo, Omri, Mourad, de Mauduit, Bernadette

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Detailed arsenic concentration profiles at Si / SiO 2 interfaces von Pei, Lirong, Duscher, Gerd, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, Windl, Wolfgang

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Etude de l'impact de la pré-amorphisation par implantation ionique pour l'optimisation des contacts siliciurés von Delwail, Clara

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Detailed arsenic concentration profiles at Si/SiO[sub 2] interfaces von Pei, Lirong, Duscher, Gerd, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, Windl, Wolfgang

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Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces von Pei Lirong, Duscher, Gerd, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, Windl, Wolfgang

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Mise en oeuvre de procédés innovants pour l'optimisation de contacts TiSi pour les technologies imageurs avancées von Esposito, Laura

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