Why do we talk to ourselves? von Fields, Chris

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IF-sampling fourth-order bandpass /Delta//Sigma/ modulator for digital receiver applications von Cosand, A E, Jensen, J F, Choe, H C, Fields, C H

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A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology von Sokolich, M., Fields, C.H., Thomas, S., Binqiang Shi, Boegeman, Y.K., Martinez, R., Kramer, A.R., Madhav, M.

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A 2-GS/s 3-bit DeltaSigma-modulated DAC with tunable bandpass mismatch shaping von Kaplan, T S, Jensen, J F, Fields, CH, Chang, M-CF

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IF-sampling fourth-order bandpass Delta capital sigma modulator for digital receiver applications von Cosand, A E, Jensen, J F, Choe, H C, Fields, CH

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InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers von Sokolich, M., Chen, M.Y., Rajavel, R.D., Chow, D.H., Royter, Y., Thomas, S., Fields, C.H., Binqiang Shi, Bui, S.S., James Chingwei Li, Hitko, D.A., Elliott, K.R.

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A submicrometer 252 GHz f sub(T) and 283 GHz f sub(MAX) InP DHBT with reduced C sub(BC) using selectively implanted buried subcollector (SIBS) von Li, J C, Chen, M, Hitko, DA, Fields, CH, Shi, Binqiang, Rajavel, R, Asbeck, P M, Sokolich, M

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Patterned n+ implant into InP substrate for HBT subcollector von Chen, M.Y., Sokolich, M., Chow, D.H., Bui, S., Royter, Y., Hitko, D., Thomas, S., Fields, C.H., Rajavel, R.D., Biqiang Shi

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InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion von Broekaert, T.P.E., Jensen, J.F., Yap, D., Persechini, D.L., Bourgholtzer, S., Fields, C.H., Brown-Boegeman, Y.K., Binqiang Shi, Walden, R.H.

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Submicron AlInAs/InGaAs HBT with 160 GHz f sub(T) at 1 mA collector current von Sokolich, Marko, Fields, Charles H, Madhav, Meena

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RF modeling approach to determining end-of-life reliability for InP-based HBTs von Thomas III, S, Fields, C.H, Madhav, M

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Application of silicon-based process simulation tools to the fabrication of heterojunction bipolar transistors von Fields, C.H., Thomas, S.

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Planar integration of heterojunction bipolar transistors and resonant tunneling diodes von Thomas, S., Chow, D. H., Kiziloglu, K., Fields, C. H., Madhav, M., Arthur, A.

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Circuit design considerations for 100 GHz clock rates von Hitko, D.A., Hussain, T., Li, J.C., Fields, C.H., Elliott, K.

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Fabrication of InP-based HBT integrated circuits von Thomas, S., Fields, C.H., Sokolich, M., Kiziloglu, K., Chow, D.

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Simulated fabrication of heterojunction bipolar transistors using process technology CAD tools von Fields, C.H., Thomas, S.

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Integrated multiple sensor controlled molecular beam epitaxy for high performance electronic devices von Chow, D.H., Roth, J.A., Thomas, S., Kiziloglu, K., Fields, C.H., Arthur, A., Enquist, P.M., Fountain, G., Reed, F., Johs, B., Olson, G.L., Williamson, W.S.

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44 GHz fully integrated and differential monolithic VCOs with wide tuning range in AlInAs/InGaAs/InP DHBT von Kurdoghlian, A., Mokhtari, M., Fields, C.H., Thomas, S.

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38 GHz low phase noise CPW monolithic VCOs implemented in manufacturable AlInAs/InGaAs HBT IC technology von Kurdoghlian, A., Sokolich, M., Case, M., Micovic, M., Thomas, S., Fields, C.H.

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40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT von Kurdoghlian, A., Mokhtari, M., Fields, C.H., Wetzel, M., Sokolich, M., Micovic, M., Thomas, S., Shi, B., Sawins, M.

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