Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy von Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M., Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K., Pons, M.

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Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy von Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K., Pons, M.

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Strain assisted inter-diffusion in GaN/AlN quantum dots von Leclere, C., Fellmann, V., Bougerol, C., Cooper, D., Gayral, B., Proietti, M. G., Renevier, H., Daudin, B.

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Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures von Redondo-Cubero, A, Lorenz, K, Wendler, E, Carvalho, D, Ben, T, Morales, F M, García, R, Fellmann, V, Daudin, B

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GaN:Pr3+ nanostructures for red solid state light emission von Rodrigues, J, Ben Sedrine, N, Felizardo, M, Soares, M. J, Alves, E, Neves, A. J, Fellmann, V, Tourbot, G, Auzelle, T, Daudin, B, Bo kowski, M, Lorenz, K, Monteiro, T

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Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy von Coudurier, N., Boichot, R., Fellmann, V., Claudel, A., Blanquet, E., Crisci, A., Coindeau, S., Pique, D., Pons, M.

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Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures von Magalhães, S., Lorenz, K., Franco, N., Barradas, N. P., Alves, E., Monteiro, T., Amstatt, B., Fellmann, V., Daudin, B.

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The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD von Peres, M., Magalhães, S., Rodrigues, J., Soares, M.J., Fellmann, V., Neves, A.J., Alves, E., Daudin, B., Lorenz, K., Monteiro, T.

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Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy von Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Daudin, B.

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Molecular beam epitaxy growth and optical properties of AlN nanowires von Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Cros, A., Daudin, B.

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Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation von Magalhães, S., Peres, M., Fellmann, V., Daudin, B., Neves, A. J., Alves, E., Monteiro, T., Lorenz, K.

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Selective ion-induced intermixing and damage in low-dimensional GaN/AIN quantum structures von REDONDO-CUBERO, A, LORENZ, K, WENDLER, E, CARVALHO, D, BEN, T, MORALES, F. M, GARCIA, R, FELLMANN, V, DAUDIN, B

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Functionalizing self-assembled GaN quantum dot superlatticesby Eu-implantation von Magalhães, S., Peres, M., Fellmann, V., Daudin, B., Neves, A. J., Alves, E., Monteiro, T., Lorenz, K.

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GaN:Pr 3+ nanostructures for red solid state light emission von Rodrigues, J., Ben Sedrine, N., Felizardo, M., Soares, M. J., Alves, E., Neves, A. J., Fellmann, V., Tourbot, G., Auzelle, T., Daudin, B., Boćkowski, M., Lorenz, K., Monteiro, T.

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Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots von Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Alves, E., Lorenz, K., Okuno-Vila, H., Fellmann, V., Bougerol, C., Daudin, B.

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Significance of initial stages on the epitaxial growth of AlN using high temperature halide chemical vapor deposition von Balaji, Manavaimaran, Claudel, Arnaud, Fellmann, Vincent, Gélard, Isabelle, Blanquet, Elisabeth, Boichot, Raphaël, Coindeau, Stéphane, Roussel, Hervé, Pique, Didier, Baskar, Krishnan, Pons, Michel

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Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots: Influence of thermal annealing on the properties of GaN/AlN quantum dots von Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Alves, E., Lorenz, K., Okuno-Vila, H., Fellmann, V., Bougerol, C., Daudin, B.

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GaN:Pr super(3+) nanostructures for red solid state light emission von Rodrigues, J, Ben Sedrine, N, Felizardo, M, Soares, MJ, Alves, E, Neves, A J, Fellmann, V, Tourbot, G, Auzelle, T, Daudin, B, Bockowski, M, Lorenz, K, Monteiro, T

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Growth mechanism of catalyst-free 0001 GaN and AlN nanowires on Si by molecular beam epitaxy von Landre, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, Hubert, Daudin, B.

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Effect of annealing on AIN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures von MAGALHAES, S, LORENZ, K, FRANCO, N, BARRADAS, N. P, ALVES, E, MONTEIRO, T, AMSTATT, B, FELLMANN, V, DAUDIN, B

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