Biological control of aragonite formation in stony corals von Von Euw, Stanislas, Zhang, Qihong, Manichev, Viacheslav, Murali, Nagarajan, Gross, Juliane, Feldman, Leonard C., Gustafsson, Torgny, Flach, Carol, Mendelsohn, Richard, Falkowski, Paul G.

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An intra-cytoplasmic route for SARS-CoV-2 transmission unveiled by Helium-ion microscopy von Merolli, Antonio, Kasaei, Leila, Ramasamy, Santhamani, Kolloli, Afsal, Kumar, Ranjeet, Subbian, Selvakumar, Feldman, Leonard C.

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Interfacial Connections between Organic Perovskite/n+ Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water von Gu, Hengfei, Zhang, Fei, Hwang, Shinjae, Laursen, Anders B., Liu, Xin, Park, So Yeon, Yang, Mengjin, Bramante, Rosemary C., Hijazi, Hussein, Kasaei, Leila, Feldman, Leonard C., Yeh, Yao‐Wen, Batson, Philip E., Larson, Bryon W., Li, Mengjun, Li, Yifei, Wyatt, Keenan, Young, James L., Teeluck, Krishani, Zhu, Kai, Garfunkel, Eric, Dismukes, G. Charles

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Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation von Gang Liu, Ahyi, A. C., Yi Xu, Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., Dhar, S.

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs von Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.

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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping von Modic, Aaron, Gang Liu, Ahyi, Ayayi C., Yuming Zhou, Pingye Xu, Hamilton, Michael C., Williams, John R., Feldman, Leonard C., Dhar, Sarit

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Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid von Dhar, Sarit, Seitz, Oliver, Halls, Mathew D, Choi, Sungho, Chabal, Yves J, Feldman, Leonard C

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Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy von Akin, Cevat, Yi, Jingang, Feldman, Leonard C, Durand, Corentin, Hus, Saban M, Li, An-Ping, Filler, Michael A, Shan, Jerry W

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Direct Writing of Metal Nanostructures with Focused Helium Ion Beams von Bruevich, Vladimir, Kasaei, Leila, Feldman, Leonard C., Podzorov, Vitaly

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Fundamentals of Nanoscale Film Analysis von Alford, Terry L

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Defect engineering of silicon with ion pulses from laser acceleration von Redjem, Walid, Amsellem, Ariel J., Allen, Frances I., Benndorf, Gabriele, Bin, Jianhui, Bulanov, Stepan, Esarey, Eric, Feldman, Leonard C., Ferrer Fernandez, Javier, Garcia Lopez, Javier, Geulig, Laura, Geddes, Cameron R., Hijazi, Hussein, Ji, Qing, Ivanov, Vsevolod, Kanté, Boubacar, Gonsalves, Anthony, Meijer, Jan, Nakamura, Kei, Persaud, Arun, Pong, Ian, Obst-Huebl, Lieselotte, Seidl, Peter A., Simoni, Jacopo, Schroeder, Carl, Steinke, Sven, Tan, Liang Z., Wunderlich, Ralf, Wynne, Brian, Schenkel, Thomas

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Oxygen Incorporation in Rubrene Single Crystals von Mastrogiovanni, Daniel D. T., Mayer, Jeff, Wan, Alan S., Vishnyakov, Aleksey, Neimark, Alexander V., Podzorov, Vitaly, Feldman, Leonard C., Garfunkel, Eric

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Mitochondria Protection after Acute Ischemia Prevents Prolonged Upregulation of IL-1 β and IL-18 and Arrests CKD von Szeto, Hazel H, Liu, Shaoyi, Soong, Yi, Seshan, Surya V, Cohen-Gould, Leona, Manichev, Viacheslav, Feldman, Leonard C, Gustafsson, Torgny

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Dynamic scaling, island size distribution, and morphology in the aggregation regime of submonolayer pentacene films von Ruiz, Ricardo, Nickel, Bert, Koch, Norbert, Feldman, Leonard C, Haglund, Jr, Richard F, Kahn, Antoine, Family, Fereydoon, Scoles, Giacinto

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Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3 von Dodson, Adam, Wu, Hongrui, Rai, Anuruddh, Apte, Sohm, O’Hara, Andrew, Lawrie, Benjamin, Wang, Yongqiang, Ueda, Akira, Krzyżanowska, Halina, Titze, Michael, Davidson, Jimmy, Hmelo, Anthony, Posadas, Agham B., Demkov, Alexander A., Pantelides, Sokrates T., Feldman, Leonard C., Tolk, Norman H.

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Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery von Liu, Gang, Xu, Yi, Xu, Can, Basile, Alberto, Wang, Feng, Dhar, Sarit, Conrad, Edward, Mooney, Patricia, Gustafsson, Torgny, Feldman, Leonard C.

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Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO2 Interfaces von Wang, Lu, Dhar, Sarit, Feldman, Leonard C., Kuroda, Marcelo A.

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Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites von Bruevich, Vladimir, Kasaei, Leila, Rangan, Sylvie, Hijazi, Hussein, Zhang, Zhenyuan, Emge, Thomas, Andrei, Eva Y., Bartynski, Robert A., Feldman, Leonard C., Podzorov, Vitaly

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Shot noise-mitigated secondary electron imaging with ion count-aided microscopy von Agarwal, Akshay, Kasaei, Leila, He, Xinglin, Kitichotkul, Ruangrawee, Hitit, Oğuz Kağan, Peng, Minxu, Schultz, J Albert, Feldman, Leonard C, Goyal, Vivek K

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Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing von Das, Suman, Gu, Hengfei, Wang, Lu, Ahyi, Ayayi, Feldman, Leonard C., Garfunkel, Eric, Kuroda, Marcelo A., Dhar, Sarit

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