Plasma doping for the fabrication of ultra-shallow junctions von Felch, S.B, Fang, Z, Koo, B.-W, Liebert, R.B, Walther, S.R, Hacker, D

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Optimization of pre-amorphization and dopant implant conditions for advanced annealing von Felch, S.B., Graoui, H., Tsai, G., Mayur, A.

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A comparison of three techniques for profiling ultra-shallow p +-n junctions von Felch, S.B., Brennan, R., Corcoran, S.F., Webster, G.

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Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability von Ortolland, C., Noda, T., Chiarella, T., Kubicek, S., Kerner, C., Vandervorst, W., Opdebeeck, A., Vrancken, C., Horiguchi, N., De Potter, M., Aoulaiche, M., Rosseel, E., Felch, S.B., Absil, P., Schreutelkamp, R., Biesemans, S., Hoffmann, T.

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Device dependence of charging effects from high-current ion implantation von Felch, S.B., Basra, V.K., McKenna, C.M.

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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants von Felch, S.B., Foad, M.A., Olsen, C., Nouri, F., Matsunaga, Y., Natsuaki, N.

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Advanced front-end processes for the 45 nm CMOS technology node von Collart, E.J.H., Felch, S.B., Graoui, H., Kirkwood, D., Tallavarjula, S., Berg, J.A. Van den, Hamilton, J., Cowern, N.E.B., Kirkby, K.J.

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Advanced front-end processes for the 45nm CMOS technology node von Collart, E.J.H., Felch, S.B., Graoui, H., Kirkwood, D., Tallavarjula, S., Berg, J.A. Van den, Hamilton, J., Cowern, N.E.B., Kirkby, K.J.

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Characterization of ultra-shallow p + -n junctions formed by plasma doping with BF 3 and N 2 plasmas von Felch, S.B., Lee, B.S., Daryanani, S.L., Downey, D.F., Matyi, R.J.

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Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas von FELCH, S. B, LEE, B. S, DARYANANI, S. L, DOWNEY, D. F, MATYI, R. J

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Boron doping of silicon by plasma source ion implantation von Matyi, R.J., Chapek, D.L., Brunco, D.P., Felch, S.B., Lee, B.S.

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Precise determination of the cooper-pair mass von TATE, J, CABRERA, B, FELCH, S. B, ANDERSON, J. T

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Use of ultra-low-energy BF2+ implantation and rapid annealing to avoid channeling effects in shallow junction formation von Felch, S.B., Powell, R.A.

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Device charge-to-breakdown studies on a high-current implanter von Felch, S.B., Mehta, S., Kikuchi, S., Kitahara, S.

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Analysis techniques of charging damage studied on three different high-current ion implanters von Felch, S.B., Larson, L.A., Current, M.I., Lindsey, D.W.

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Low‐frequency noise reduction in SQUID measurements using a laser‐driven superconducting switch. Part A: Direct input circuit switching von Anderson, J. T., Cabrera, B., Taber, M. A., Felch, S. B., Tate, J.

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Wafer charging study on a Varian 160 XP ion implanter with charge-sensitive devices von Nee, R., Mehta, S., Felch, S.B., Kikuchi, S.

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Use of ultra-low-energy BF 2+ implantation and rapid annealing to avoid channeling effects in shallow junction formation von Felch, S.B., Powell, R.A.

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Plasma Doped (PLAD) Deep Sub-Half Micron Buried Channel PMOSFETS and its Application to Next Generation ULSI Circuits von Ahmad, A., Prall, K., Chapek, D.L., Thakur, R.P.S., Felch, S.B., Brunco, D.P.

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Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity von Rosseel, E., Lu, J.P., Hikavyy, A., Verheyen, P., Hoffmann, T., Richard, O., Geypen, J., Bender, H., Loo, R., Absil, P., McIntosh, R., Felch, S.B., Schreutelkamp, R.

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