Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon von Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

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Plasma doping for the fabrication of ultra-shallow junctions von Felch, S.B, Fang, Z, Koo, B.-W, Liebert, R.B, Walther, S.R, Hacker, D

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PULSION registered HP: Tunable, High Productivity Plasma Doping von Felch, S. B., Torregrosa, F., Etienne, H., Spiegel, Y., Roux, L., Turnbaugh, D.

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Carrier illumination measurement of dopant lateral diffusion von Budiarto, E., Segovia, M., Borden, P., Felch, S.

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Photon Influence on P and B Diffusion von Aderhold, W, Hunter, A, Felch, S B, Ranish, J

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Physical and Electrical Characterization of 120 nm Technology Node Devices using PULSION registered Plasma Doping von Spiegel, Y., Torregrosa, F., Etienne, H., Felch, S. B., Roux, L., Roux, P., Figarols, F., Grosjean, C., Poupinet, S., Regnier, P., Delalleau, J., Maillot, P., Pizzuto, O.

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Advanced front-end processes for the 45 nm CMOS technology node von Collart, E.J.H., Felch, S.B., Graoui, H., Kirkwood, D., Tallavarjula, S., Berg, J.A. Van den, Hamilton, J., Cowern, N.E.B., Kirkby, K.J.

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Optimization of advanced PMOS junctions using Ge, B and F co-implants von Graoui, H., Hilkene, M., McComb, B., Castle, M., Felch, S., Al-Bayati, A., Tjandra, A., Foad, M.A.

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Optimization of pre-amorphization and dopant implant conditions for advanced annealing von Felch, S.B., Graoui, H., Tsai, G., Mayur, A.

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Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation von Collart, E. J. H., Felch, S. B., Pawlak, B. J., Absil, P. P., Severi, S., Janssens, T., Vandervorst, W.

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Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing von Noda, T, Felch, S, Parihar, V, Vrancken, C, Janssens, T, Bender, H, Van Daele, B, Vandervorst, W

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Plasma doping for shallow junctions von Goeckner, M. J., Felch, S. B., Fang, Z., Lenoble, D., Galvier, J., Grouillet, A., Yeap, G. C.-F., Bang, D., Lin, M.-R.

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Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing von Felch, S B, Falepin, A, Severi, S, Augendre, E, Hoffman, T, Noda, T, Parihar, V, Nouri, F, Schreutelkamp, R

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Gate Dielectric Damage Due To High-Tilt Implant von Felch, S B, Hung, R, Ninan, B, Smayling, M, Toshiyuki, N, Chen, H, Chang, C-P

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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants von Felch, S.B., Foad, M.A., Olsen, C., Nouri, F., Matsunaga, Y., Natsuaki, N.

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Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length von Collart, E J H, Pawlak, B J, Duffy, R, Augendre, E, Severi, S, Janssens, T, Absil, P, Vandervorst, W, Felch, S, Scheutelkamp, R, Cowern, N E B

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Precise determination of the cooper-pair mass von TATE, J, CABRERA, B, FELCH, S. B, ANDERSON, J. T

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Suppression of phosphorus diffusion by carbon co-implantation von Pawlak, B. J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S. B., Collart, E. J. H., Cowern, N. E. B.

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Boron doping of silicon by plasma source ion implantation von Matyi, R.J., Chapek, D.L., Brunco, D.P., Felch, S.B., Lee, B.S.

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Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas von FELCH, S. B, LEE, B. S, DARYANANI, S. L, DOWNEY, D. F, MATYI, R. J

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