Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates von Zehnder, U., Weimar, A., Strauss, U., Fehrer, M., Hahn, B., Lugauer, H.-J., Härle, V.

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Impact of defects on the carrier transport in GaN von Fehrer, M, Einfeldt, S, Birkle, U, Gollnik, T, Hommel, D

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Internal photoluminescence in ZnSe homoepitaxy and application in blue–green–orange mixed-color light-emitting diodes von Wenisch, H., Fehrer, M., Klude, M., Ohkawa, K., Hommel, D.

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InGaN on SiC LEDs for High Flux and High Current Applications von Baur, J., Hahn, B., Fehrer, M., Eisert, D., Stein, W., Plössl, A., Kühn, F., Zull, H., Winter, M., Härle, V.

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Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy von Ebel, R., Fehrer, M., Figge, S., Einfeldt, S., Selke, H., Hommel, D.

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Influence of driving conditions on the stability of ZnSe-based cw-laser diodes von Klude, M, Fehrer, M, Großmann, V, Hommel, D

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Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy von Kirchner, V., Fehrer, M., Figge, S., Heinke, H., Einfeldt, S., Hommel, D., Selke, H., Ryder, P.L.

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Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates von Wenisch, H., Fehrer, M., Ohkawa, K., Hommel, D., Prokesch, M., Rinas, U., Hartmann, H.

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Low threshold II–VI laser diodes with transversal and longitudinal single-mode emission von Legge, M, Bacher, G, Forchel, A, Klude, M, Fehrer, M, Hommel, D

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Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region von Michler, P., Lilienkamp, T., Ebeling, W., Gutowski, J., Behringer, M., Fehrer, M., Hommel, D.

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Plasma assisted molecular beam epitaxy growth of GaN von Einfeldt, S, Birkle, U, Thomas, C, Fehrer, M, Heinke, H, Hommel, D

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Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures von Lilienkamp, T., Michler, P., Ebeling, W., Gutowski, J., Behringer, M., Fehrer, M., Hommel, D.

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Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes von Behringer, M., Ohkawa, K., Großmann, V., Heinke, H., Leonardi, K., Fehrer, M., Hommel, D., Kuttler, M., Strassburg, M., Bimberg, D.

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Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC von Baur, J., Strauss, U., Bruederl, G., Eisert, D., Oberschmid, R., Hahn, B., Lugauer, H.-J., Bader, S., Zehnder, U., Fehrer, M., Härle, V.

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Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE von Strauf, S., Michler, P., Gutowski, J., Birkle, U., Fehrer, M., Einfeldt, S., Hommel, D.

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy von Stemmer, J, Fedler, F, Klausing, H, Mistele, D, Rotter, T, Semchinova, O, Aderhold, J, Sanchez, A.M, Pacheco, F.J, Molina, S.I, Fehrer, M, Hommel, D, Graul, J

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Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials von Prösch, G., Beyer, R., Behringer, M., Fehrer, M., Burghardt, H., Thomas, E., Hommel, D., Zahn, D.R.T.

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Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates von Wenisch, H, Fehrer, M, Klude, M, Isemann, A, Großmann, V, Heinke, H, Ohkawa, K, Hommel, D, Prokesch, M, Rinas, U, Hartmann, H

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High-Power Operation of ZnSe-Based cw-Laser Diodes von Klude, M., Fehre, M., Hommel, D.

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Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy von Hellig, K., Prösch, G., Behringer, M., Fehrer, M., Beyer, R., Burghardt, H., Hommel, D., Zahn, D. R. T.

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