Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance von Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

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Nanopatterning with UV Optical Lithography von Rothschild, M., Bloomstein, T. M., Efremow, N., Fedynyshyn, T. H., Fritze, M., Pottebaum, I., Switkes, M.

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Chemical and semiconducting properties of NO2-activated H-terminated diamond von Geis, M.W., Fedynyshyn, T.H., Plaut, M.E., Wade, T.C., Wuorio, C.H., Vitale, S.A., Varghese, J.O., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

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A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions von Wynn, C M, Fedynyshyn, T H, Geis, M W, Kunz, R R, Lyszczarz, T M, Rothschild, M, Spector, S J, Switkes, M

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Reversible Electrowetting on Dual-Scale-Patterned Corrugated Microstructured Surfaces von Berry, S., Fedynyshyn, T., Parameswaran, L., Cabral, A.

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Resists and Other Critical Issues in 157-nm Lithography von Rothschild, M., Bloomstein, T. M., Fedynyshyn, T. H., Kunz, R. R., Liberman, V., Switkes, M.

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Fluorine—an enabler in advanced photolithography von Rothschild, M., Bloomstein, T.M., Fedynyshyn, T.H., Liberman, V., Mowers, W., Sinta, R., Switkes, M., Grenville, A., Orvek, K.

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DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing von Bruenger, W.H., Buschbeck, H., Cekan, E., Eder, S., Fedynyshyn, T.H., Hertlein, W.G., Hudek, P., Kostic, I., Loeschner, H., Rangelow, I.W., Torkler, M.

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Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer von Sondi, Ivan, Fedynyshyn, Theodore H, Sinta, Roger, Matijević, Egon

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Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond von Geis, MW, Fedynyshyn, TH, Plauta, ME, Wade, TC, Wuorio, CH, Vitale, SA, Varghese, JO, Grotjohn, TA, Nemanich, RJ, Hollis, MA

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Mask dependent etch rates. III: The effect of a silver etch mask on the plasma etch rate of silicon von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, DUMAS, R. H

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Nanopatterning with UV optical lithography: Fabrication of Sub-45-nm structures for the next generation of devices von ROTHSCHILD, M, BLOOMSTEIN, T. M, EFREMOW, N. JR, FEDYNYSHYN, T. H, FRITZE, M, POTTEBAUM, I, SWITKES, M

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The effect of diffusion, reaction order, and developer selectivity on the performance of positive DUV resists von Fedynyshyn, T.H., Thackeray, J.W., Mori, J.M.

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157 nm: Deepest deep-ultraviolet yet von Rothschild, M., Bloomstein, T. M., Curtin, J. E., Downs, D. K., Fedynyshyn, T. H., Hardy, D. E., Kunz, R. R., Liberman, V., Sedlacek, J. H. C., Uttaro, R. S., Bates, A. K., Van Peski, C.

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The effect of metal masks on the plasma etch rate of silicon von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, CHEN, B. A, MA, T. P

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Hybrid optical maskless lithography: Scaling beyond the 45 nm node von Fritze, M., Bloomstein, T. M., Tyrrell, B., Fedynyshyn, T. H., Efremow, N. N., Hardy, D. E., Cann, S., Lennon, D., Spector, S., Rothschild, M., Brooker, P.

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Sub-0.5 micron lithography with i-line acid-hardened negative resists von Allen, M.T., Calabrese, G.S., Fedynyshyn, T.H., Lamola, A.A., Small, R.D.

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The effect of aluminium vs. photoresist masking on the etching rates of silicon and silicon dioxide in CF4/O2 plasmas von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, HOOK, T. B, MING-DENG LIU, TSO-PING MA

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Immersion patterning down to 27 nm half pitch von Bloomstein, T. M., Fedynyshyn, T. H., Pottebaum, I., Marchant, M. F., Deneault, S. J., Rothschild, M.

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Fluoroaromatic Resists for 157-nm Lithography von Fedynyshyn, Theodore H., Kunz, Roderick R., Sinta, Roger F., Sworin, Michael, Mowers, William A., Goodman, Russell B., Cabral, Alberto

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