Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance von Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

Volltext

Nanopatterning with UV Optical Lithography von Rothschild, M., Bloomstein, T. M., Efremow, N., Fedynyshyn, T. H., Fritze, M., Pottebaum, I., Switkes, M.

Volltext

A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions von Wynn, C M, Fedynyshyn, T H, Geis, M W, Kunz, R R, Lyszczarz, T M, Rothschild, M, Spector, S J, Switkes, M

Volltext

Chemical and semiconducting properties of NO2-activated H-terminated diamond von Geis, M.W., Fedynyshyn, T.H., Plaut, M.E., Wade, T.C., Wuorio, C.H., Vitale, S.A., Varghese, J.O., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

Volltext

Resists and Other Critical Issues in 157-nm Lithography von Rothschild, M., Bloomstein, T. M., Fedynyshyn, T. H., Kunz, R. R., Liberman, V., Switkes, M.

Volltext

DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing von Bruenger, W.H., Buschbeck, H., Cekan, E., Eder, S., Fedynyshyn, T.H., Hertlein, W.G., Hudek, P., Kostic, I., Loeschner, H., Rangelow, I.W., Torkler, M.

Volltext

Fluorine—an enabler in advanced photolithography von Rothschild, M., Bloomstein, T.M., Fedynyshyn, T.H., Liberman, V., Mowers, W., Sinta, R., Switkes, M., Grenville, A., Orvek, K.

Volltext

Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer von Sondi, Ivan, Fedynyshyn, Theodore H, Sinta, Roger, Matijević, Egon

Volltext

Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond von Geis, MW, Fedynyshyn, TH, Plauta, ME, Wade, TC, Wuorio, CH, Vitale, SA, Varghese, JO, Grotjohn, TA, Nemanich, RJ, Hollis, MA

Volltext

157 nm: Deepest deep-ultraviolet yet von Rothschild, M., Bloomstein, T. M., Curtin, J. E., Downs, D. K., Fedynyshyn, T. H., Hardy, D. E., Kunz, R. R., Liberman, V., Sedlacek, J. H. C., Uttaro, R. S., Bates, A. K., Van Peski, C.

Volltext

The effect of diffusion, reaction order, and developer selectivity on the performance of positive DUV resists von Fedynyshyn, T.H., Thackeray, J.W., Mori, J.M.

Volltext

Mask dependent etch rates. III: The effect of a silver etch mask on the plasma etch rate of silicon von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, DUMAS, R. H

Volltext

Nanopatterning with UV optical lithography: Fabrication of Sub-45-nm structures for the next generation of devices von ROTHSCHILD, M, BLOOMSTEIN, T. M, EFREMOW, N. JR, FEDYNYSHYN, T. H, FRITZE, M, POTTEBAUM, I, SWITKES, M

Volltext

The effect of metal masks on the plasma etch rate of silicon von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, CHEN, B. A, MA, T. P

Volltext

Hybrid optical maskless lithography: Scaling beyond the 45 nm node von Fritze, M., Bloomstein, T. M., Tyrrell, B., Fedynyshyn, T. H., Efremow, N. N., Hardy, D. E., Cann, S., Lennon, D., Spector, S., Rothschild, M., Brooker, P.

Volltext

Sub-0.5 micron lithography with i-line acid-hardened negative resists von Allen, M.T., Calabrese, G.S., Fedynyshyn, T.H., Lamola, A.A., Small, R.D.

Volltext

The effect of aluminium vs. photoresist masking on the etching rates of silicon and silicon dioxide in CF4/O2 plasmas von FEDYNYSHYN, T. H, GRYNKEWICH, G. W, HOOK, T. B, MING-DENG LIU, TSO-PING MA

Volltext

Fluoroaromatic Resists for 157-nm Lithography von Fedynyshyn, Theodore H., Kunz, Roderick R., Sinta, Roger F., Sworin, Michael, Mowers, William A., Goodman, Russell B., Cabral, Alberto

Volltext

Immersion patterning down to 27 nm half pitch von Bloomstein, T. M., Fedynyshyn, T. H., Pottebaum, I., Marchant, M. F., Deneault, S. J., Rothschild, M.

Volltext

Immersion patterning down to 27nm half pitch von Bloomstein, T. M., Fedynyshyn, T. H., Pottebaum, I., Marchant, M. F., Deneault, S. J., Rothschild, M.

Volltext