Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission von Brown, D.M., Sandvik, P.M., Fedison, J.B., Hibshman, J., Matocha, K.S.

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Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers von Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

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An implanted-emitter 4H-SiC bipolar transistor with high current gain von Tang, Y., Fedison, J.B., Chow, T.P.

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Silicon carbide photodiode sensor for combustion control von Brown, D.M., Fedison, J.B., Hibshman, J.R., Kretchmer, J.W., Lombardo, L., Matocha, K.S., Sandvik, P.M.

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High-voltage implanted-emitter 4H-SiC BJTs von Yi Tang, Fedison, J.B., Chow, T.P.

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Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors von Fedison, J.B., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

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The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs von Yi Tang, Fedison, J.B., Chow, T.P.

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An implanted-emitter 4H-SiC bipolar transistor with high current gain von Yi Tang, Fedison, J.B., Chow, T.P.

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High temperature characterization of implanted-emitter 4H-SiC BJT von Yi Tang, Fedison, J.B., Chow, T.P.

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Switching characteristics of 3 kV 4H-SiC GTO thyristors von Fedison, J.B., Chow, T.P., Agarwal, A., Ryu, S., Singh, R., Kordina, O., Palmour, J.

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