Semiconductor Devices and Technologies for Future Ultra Low Power Electronics von Nirmal, D, Ajayan, J, Fay, Patrick J

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Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN von Cao, Lina, Zhu, Zhongtao, Harden, Galen, Ye, Hansheng, Wang, Jingshan, Hoffman, Anthony, Fay, Patrick J.

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Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor von Tang, Yong, Amlani, Islamshah, Orlov, Alexei O, Snider, Gregory L, Fay, Patrick J

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Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime von Tiwari, B. N., Fay, P. J., Bernstein, G. H., Orlov, A. O., Porod, W.

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Enhancement-Mode Pseudomorphic [Formula Omitted]-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz von Xing, Xiu, Fay, Patrick J

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Enhancement-Mode Pseudomorphic hbox In 0.22 hbox Ga 0.78 hbox As -Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz von Xing, Xiu, Fay, Patrick J

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Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors von Tayal, Shubham, Rahi, Shiromani Balmukund, Srivastava, Jay Prakash, Bhattacharya, Sandip

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Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications von Sridevi, R., Pravin, J. Charles

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Switching Performance Analysis of III-V FinFETs von Basak, Arighna, Deyasi, Arpan, Biswas, Kalyan, Sarkar, Angsuman

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An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective von Pradhan, Kumar Prasannajit

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Characterization of Silicon FinFETs under Nanoscale Dimensions von Baek, Rock-Hyun, Yoon, Jun-Sik

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Ultra Low Power III-V Tunnel Field-Effect Transistors von Ajayan, J., Nirmal, D.

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Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications von Jaiswal, Nilesh Kumar, Ramakrishnan, V. N.

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Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling von Kaur, Harsupreet

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High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications von Mathew, Ribu, Beohar, Ankur, Upadhyay, Abhishek Kumar

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Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors von Ramkumar, K., Shailendra, Singh Rohitkumar, Ramakrishnan, V. N.

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Fundamentals of 2-D Materials von Anushya, Ganesan, Ramachandran, Rasu, Sarika, Raj, Benjamin, Michael

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Enhancement-Mode Pseudomorphic \hbox \hbox\hbox-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz von Xiu Xing, Fay, P J

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Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs With Ultrathin InAIP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz von XIU XING, MEMBER, Student, FAY, Patrick J

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