Anomalous behavior of ion-implanted GaSb von CALLEC, R, FAVENNEC, P. N, SALVI, M, L'HARIDON, H, GAUNEAU, M

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Optical activation of Er3+ implanted in silicon by oxygen impurities von FAVENNEC, P. N, L'HARIDON, H, MOUTONNET, D, SALVI, M, GAUNEAU, M

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Schottky and field-effect transistor fabrication on InP and GaInAs von Loualiche, S., L’Haridon, H., Le Corre, A., Lecrosnier, D., Salvi, M., Favennec, P. N.

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A composite layer of Al-Er-O particles in a silicon matrix von SALVI, M, L'HARIDON, H, FAVENNEC, P. N, MOUTONNET, D, GAUNEAU, M, KECHOUANE, M

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Crystalline characterization by Rutherford backscattering spectrometry and electron channeling of in situ grown YBa2Cu3O7 thin films deposited on (100) MgO by d.c. sputtering or la... von KECHOUANE, M, L'HARIDON, H, SALVI, M, FAVENNEC, P. N, GAUNEAU, M, GUILLOUX-VIRY, M, KARKUT, M. G, THIVET, C, PERRIN, A

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Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry von BEDEL, E, LANDA, G, CARLES, R, RENUCCI, J. B, ROQUAIS, J. M, FAVENNEC, P. N

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Schottky diode and field-effect transistor on InP von LOUALICHE, S, GINOUDI, A, L'HARIDON, H, SALVI, M, LE CORRE, A, LECROSNIER, D, FAVENNEC, P. N

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Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements von LONGERE, J. Y, SCHOHE, K, KRAWCZYK, S. K, COQUILLE, R, L'HARIDON, H, FAVENNEC, P. N

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Gold diffusion in InP von PARGUEL, V, FAVENNEC, P. N, GAUNEAU, M, RIHET, Y, CHAPLAIN, R, L'HARIDON, H, VAUDRY, C

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Scanning photoluminescence technique: application to defect recovery of ion-implanted InP von L'Haridon, H, Favennec, P N, Salvi, M

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Semi-insulating layers of GaAs by oxygen implantation von Favennec, P. N.

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Erbium implanted in III-V materials von ROCHAIX, C, ROLLAND, A, FAVENNEC, P. N, LAMBERT, B, LE CORRE, A, L'HARIDON, H, SALVI, M

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Spatial investigation of an iron-doped indium phosphide ingot von L'Haridon, H., Favennec, P.N., Coquille, R., Salvi, M., Gauneau, M., Le Guillou, Y., Callec, R., Gall, P.

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Shallow p-type layers in InP by Hg implantation von FAVENNEC, P. N, L'HARIDON, H, ROQUAIS, J. M, SALVI, M, LE CLEACH, X, GOUSKOV, L

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Characteristics of Deep Electron Levels in Oxygen-Implanted and (Oxygen + Silicon) Co-Implanted n-GaAs von Quan, Dang Tran, Le Bloa, A., Guennouni, Z., Favennec, P. N.

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Selected area growth of InP by low pressure metalorganic chemical vapor deposition on ion implanted InP substrates von FAVENNEC, P. N, SALVI, M, DI FORTE POISSON, M. A, DUCHEMIN, J. P

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Investigation of compensation in implanted n -GaAs von Rao, E. V. K., Duhamel, N., Favennec, P. N., L’Haridon, H.

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Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide von Favennec, P.N., L'Haridon, H., Coquillé, R., Salvi, M., Gauneau, M., Roizes, A., David, J.P., Krawczyk, S.K., Longères, J.Y.

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Chromium gettering in GaAs by oxygen implantation von Favennec, P. N., Gauneau, M., L’Haridon, H., Deveaud, B., Evans, C. A., Blattner, R. J.

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Implantation of shallow impurities in Cr-doped semi-insulating GaAs von Favennec, P. N., L’Haridon, H.

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