An industrial 0.35 /spl mu/m SiGe BiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process von Chevalier, P., De Pestel, F., Ziad, H., Fatkhoutdinov, M., Ackaert, J., Coppens, P., Craninckx, J., Guncer, S., Pontioglu, G., Tasci, P., Yayil, F., Ergun, B.S., Kurhan, A.I., Vestiel, E., De Backer, E., Loheac, J.-L., Tack, M.

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