The Achievement of Near-Theoretical-Minimum Contact Resistance to InP von Fatemi, Navid S., Weizer, Victor G.

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The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors von Weizer, Victor G., Fatemi, Navid S.

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Satellite market trends and the enabling role of multi-junction space solar cells von Fatemi, Navid S.

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Operation and component testing of a solar thermophotovoltaic power system von Stone, K.W., Fatemi, N.S., Garverick, L.M.

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Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations von Weizer, Victor G., Fatemi, Navid S.

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InGaAs monolithic interconnected modules (MIMs) von Fatemi, N.S., Wilt, D.M., Jenkins, P.P., Weizer, V.G., Hoffman, R.W., Murray, C.S., Scheiman, D., Brinker, D., Riley, D.

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Monolithically interconnected InGaAs TPV module development von Wilt, D.M., Fatemi, N.S., Jenkins, P.P., Hoffman, R.W., Landis, G.A., Jain, R.K.

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Improved performance of p/n InP solar cells von Hoffman, R.W., Fatemi, N.S., Jenkins, P.P., Weizer, V.G., Stan, M.A., Ringel, S.A., Scheiman, D.A., Wilt, D.M., Brinker, D.J., Walters, R.J., Messenger, S.R.

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Solar array trades between very high-efficiency multi-junction and Si space solar cells von Fatemi, N.S., Pollard, H.E., Hou, H.Q., Sharps, P.R.

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Electrical and metallurgical behavior of Au/Zn contacts to p -type indium phosphide von Fatemi, Navid S., Weizer, Victor G.

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Performance of high-efficiency advanced triple-junction solar panels for the LILT Mission Dawn von Fatemi, N.S., Sharma, S., Buitrago, O., Crisman, J., Sharps, P.R., Blok, R., Kroon, M., Jalink, Cees, Harris, R., Stella, P., Distefano, S.

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The structural and electrical properties of low-resistance Ni contacts to InP von Fatemi, Navid S., Weizer, Victor G.

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The interaction of gold with gallium arsenide von Weizer, Victor G., Fatemi, Navid S.

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High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems von Wilt, David M., Fatemi, Navid S., Hoffman, Richard W., Jenkins, Phillip P., Brinker, David J., Scheiman, David, Lowe, Roland, Fauer, Maria, Jain, Raj K.

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A unique, device-friendly contact system for shallow junction p/n indium phosphide devices von WEIZER, V. G, FATEMI, N. S

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Very high efficiency InGaP/GaAs dual-junction solar cell manufacturing at Emcore Photovoltaics von Hou, H.Q., Sharps, P.R., Fatemi, N.S., Li, N., Stan, M.A., Martin, P.A., Hammons, B.E., Spadafora, F.

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Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering von Weizer, Victor G., Fatemi, Navid S.

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Design and production of extremely radiation-hard 26% InGaP/GaAs/Ge triple-junction solar cells von Stan, M.A., Sharps, P.R., Fatemi, N.S., Spadafora, F., Aiken, D., Hou, H.Q.

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The kinetics of the Au-InP interaction von Fatemi, Navid S., Weizer, Victor G.

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Contact spreading and the Au3In-to-Au9In4 transition in the Au-InP system von Weizer, Victor G., Fatemi, Navid S.

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