Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator von Ruzzarin, Maria, De Santi, Carlo, Yu, Feng, Fatahilah, Muhammad Fahlesa, Strempel, Klaas, Wasisto, Hutomo Suryo, Waag, Andreas, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

Volltext

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics von Fatahilah, Muhammad Fahlesa, Yu, Feng, Strempel, Klaas, Römer, Friedhard, Maradan, Dario, Meneghini, Matteo, Bakin, Andrey, Hohls, Frank, Schumacher, Hans Werner, Witzigmann, Bernd, Waag, Andreas, Wasisto, Hutomo Suryo

Volltext

3D GaN nanoarchitecture for field-effect transistors von Fatahilah, Muhammad Fahlesa, Strempel, Klaas, Yu, Feng, Vodapally, Sindhuri, Waag, Andreas, Wasisto, Hutomo Suryo

Volltext

Performance analysis and simulation of vertical gallium nitride nanowire transistors von Witzigmann, Bernd, Yu, Feng, Frank, Kristian, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Schumacher, Hans Werner, Wasisto, Hutomo Suryo, Römer, Friedhard, Waag, Andreas

Volltext

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula von Noor, Fatimah Arofiati, Syuhada, Ibnu, Winata, Toto, Yu, Feng, Fatahilah, Muhammad Fahlesa, Wasisto, Hutomo Suryo, Khairurrijal, Khairurrijal

Volltext

91‐3: Placement Accuracy of MicroLEDs in the 5µm Size Range Being Laser Mass Transferred von Haupt, Oliver, Griffel, Thorge, Fatahilah, Muhammad, Brune, Jan

Volltext

67‐3: Numerical Simulation for GaN‐based MicroLED Laser Induced Forward Transfer (LIFT) and Comparison With Real‐Time Measurements of the Flight Phase von Eppelt, Urs, Fatahilah, Muhammad, Brune, Jan, Haupt, Oliver

Volltext

Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors von Ruzzarin, Maria, Meneghini, Matteo, de Santi, Carlo, Neviani, Andrea, Yu, Feng, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Witzigmann, Bernd, Wasisto, Hutomo Suryo, Waag, Andreas, Meneghesso, Gaudenzio, Zanoni, Enrico

Volltext

Traceable Nanomechanical Metrology of GaN Micropillar Array von Fatahilah, Muhammad Fahlesa, Puranto, Prabowo, Yu, Feng, Langfahl‐Klabes, Jannick, Felgner, André, Li, Zhi, Xu, Min, Pohlenz, Frank, Strempel, Klaas, Peiner, Erwin, Brand, Uwe, Waag, Andreas, Wasisto, Hutomo Suryo

Volltext

Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted -GaN Channel von Yu, Feng, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Zhou, Hao, Romer, Friedhard, Bakin, Andrey, Witzigmann, Bernd, Schumacher, Hans Werner, Wasisto, Hutomo Suryo, Waag, Andreas

Volltext

Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations von Kamrani, Hamed, Yu, Feng, Frank, Kristian, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Wasisto, Hutomo Suryo, Römer, Friedhard, Waag, Andreas, Witzigmann, Bernd

Volltext

Top-Down Fabrication of Arrays of Vertical GaN Nanorods with Freestanding Top Contacts for Environmental Exposure von Nicolai Markiewicz, Olga Casals, Muhammad Fahlesa Fatahilah, Klaas Strempel, Alaaeldin Gad, Hutomo Suryo Wasisto, Andreas Waag, Joan Daniel Prades

Volltext

Vertical 3D GaN Nanoarchitectures towards an Integrated Optoelectronic Biosensing Platform in Microbial Fuel Cells von Heidi Boht, Hilke Wichmann, Gregor Scholz, Feng Yu, Klaas Strempel, Shinta Mariana, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Joan Daniel Prades, Uwe Schröder, Hutomo Suryo Wasisto, Andreas Waag

Volltext

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography von Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto

Volltext

Probability of hotspots emergence using Consecutive Dry Days (CDD) in West Kalimantan von Dwi Purwanti, Siti, Putu Okta Veanti, Desak, Sucahyono Sosaidi, Dedi, Adhitiansyah, Daffa, Abil Nurjani, Muhammad, Yuwan Purnama, Fahmi, Fatahilah Raymon, M.

Volltext