High performance continuous wave 1.3  μ m quantum dot lasers on silicon von Liu, Alan Y., Zhang, Chong, Norman, Justin, Snyder, Andrew, Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy W. K., Gossard, Arthur C., Bowers, John E.

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High peak power quantum cascade lasers monolithically integrated onto silicon with high yield and good near-term reliability von Cristobal, Enrique, Fetters, Matthew, Liu, Amy W. K., Fastenau, Joel M., Azim, Ahmad, Milbocker, Luke, Lyakh, Arkadiy

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High operating temperature nBn detector with monolithically integrated microlens von Soibel, Alexander, Keo, Sam A., Fisher, Anita, Hill, Cory J., Luong, Edward, Ting, David Z., Gunapala, Sarath D., Lubyshev, Dmitri, Qiu, Yueming, Fastenau, Joel M., Liu, Amy W. K.

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Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography von Kotulak, Nicole A., Nolde, Jill A., Katz, Michael B., Twigg, Mark E., Knipling, Keith E., Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy W. K., Aifer, Edward H.

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Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers von Lei, Lin, Li, Lu, Lotfi, Hossein, Jiang, Yuchao, Yang, Rui Q, Johnson, Matthew B, Lubyshev, Dmitri, Qiu, Yueming, Fastenau, Joel M, Liu, Amy W K

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Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited] von Liu, Amy W. K., Lubyshev, Dmitri, Fastenau, Joel M., Nelson, Scott, Kattner, Michael, Frey, Phillip

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GaAs-based high temperature electrically pumped polariton laser von Baten, Md Zunaid, Bhattacharya, Pallab, Frost, Thomas, Deshpande, Saniya, Das, Ayan, Lubyshev, Dimitri, Fastenau, Joel M., Liu, Amy W. K.

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Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth von Rode, Johann C., Han-Wei Chiang, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures von Agrawal, Ashish, Barth, Michael, Madan, Himanshu, Lee, Yi-Jing, Lin, You-Ru, Wu, Cheng-Hsien, Ko, Chih-Hsin, Wann, Clement H., Loubychev, Dmitri, Liu, Amy, Fastenau, Joel, Lindemuth, Jeff, Datta, Suman

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy von Zhu, Yan, Hudait, Mantu K., Mohata, Dheeraj K., Rajamohanan, Bijesh, Datta, Suman, Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy K.

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Epitaxial-Material Characterization Data for InP-Based Quantum Cascade Lasers Grown on Silicon Substrate von Cristobal, Enrique Sanchez, Fetters, Matthew, Liu, Amy W. K., Fastenau, Joel M., Azim, Ahmad, Milbocker, Luke, Go, Rowel, Villalobos-Meza, Alejandro, Lyakh, Arkadiy

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax ≥ 450 GHz von GRIFFITH, Zach, RODWELL, Mark J. W, FANG, Xiao-Ming, LOUBYCHEV, Dmitri, YING WU, FASTENAU, Joel M, LIU, Amy W. K

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Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb von Baril, Neil, Brown, Alexander, Maloney, Patrick, Tidrow, Meimei, Lubyshev, Dmitri, Qui, Yueming, Fastenau, Joel M., Liu, Amy W. K., Bandara, Sumith

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InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency von Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current von Mohata, D., Rajamohanan, B., Mayer, T., Hudait, M., Fastenau, J., Lubyshev, D., Liu, A. W. K., Datta, S.

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MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon von Liu, Alan Y., Zhang, Chong, Snyder, Andrew, Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy W. K., Gossard, Arthur C., Bowers, John E.

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Experimental Staggered-Source and N+ Pocket-Doped Channel III--V Tunnel Field-Effect Transistors and Their Scalabilities von Mohata, Dheeraj, Mookerjea, Saurabh, Agrawal, Ashish, Li, Yuanyuan, Mayer, Theresa, Narayanan, Vijaykrishnan, Liu, Amy, Loubychev, Dmitri, Fastenau, Joel, Datta, Suman

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Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process von Parthasarathy, N., Griffith, Z., Kadow, C., Singisetti, U., Rodwell, M.J.W., Xiao-Ming Fang, Loubychev, D., Ying Wu, Fastenau, J.M., Liu, A.W.K.

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An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage von Rode, Johann C., Chiang, Han-Wei, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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Effect of substrate orientation on Sb-based MWIR photodetector characteristics von Lubyshev, Dmitri, Fastenau, Joel M., Kattner, Mike, Frey, Phil, Nelson, Scott A., Flick, Ryan, Rogers, Michael, Liu, Amy W.K., Flint, Patrick, Faleev, Nikolai

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