Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure von Zhu, Y., Jain, N., Vijayaraghavan, S., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, Amy K., Monsegue, N., Hudait, M. K.

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Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application von Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.

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Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy von Zhu, Y., Jain, N., Vijayaraghavan, S., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, W. K., Monsegue, N., Hudait, M. K.

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Monolithic integration of InP-based transistors on Si substrates using MBE von Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

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Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure von Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.

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Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser von DJIE, H. S, OUI, B. S, FANG, X.-M, WU, Y, FASTENAU, J. M, LIU, W. K, HOPKINSON, M

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Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si von Taghipour, Z., Liu, A. W. K., Fastenau, J. M., Lubyshev, D., Nelson, S. A., Krishna, S.

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InP-based quantum cascade lasers monolithically integrated onto silicon von Go, Rowel, Krysiak, H, Fetters, M, Figueiredo, Pedro, Suttinger, Matthew, Fang, X M, Eisenbach, A, Fastenau, J M, Lubyshev, D, Liu, A W K, Huy, N G, Morgan, A O, Edwards, S A, Furlong, M J, Lyakh, Arkadiy

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Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate von Go, R., Krysiak, H., Fetters, M., Figueiredo, P., Suttinger, M., Leshin, J., Fang, X. M., Fastenau, J. M., Lubyshev, D., Liu, A. W. K., Eisenbach, A., Furlong, M. J., Lyakh, A.

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Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate von DATTA, Suman, DEWEY, G, FASTENAU, J. M, HUDAIT, M. K, LOUBYCHEV, D, LIU, W. K, RADOSAVLJEVIC, M, RACHMADY, W, CHAU, R

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Wideband DHBTs using a graded carbon-doped InGaAs base von Dahlstrom, M., Fang, X.-M., Lubyshev, D., Urteaga, M., Krishnan, S., Parthasarathy, N., Kim, Y.M., Wu, Y., Fastenau, J.M., Liu, W.K., Rodwell, M.J.W.

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Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices von Choi, K. K., Bandara, S. V., Gunapala, S. D., Liu, W. K., Fastenau, J. M.

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Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detecto... von Yakes, M K, Qadri, S B, Mahadik, NA, Yi, C, Lubyshev, D, Fastenau, J M, Liu, AWK, Aifer, E H

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MBE development of dilute nitrides for commercial long-wavelength laser applications von Malis, O., Liu, W.K., Gmachl, C., Fastenau, J.M., Joel, A., Gong, P., Bland, S.W., Moshegov, N.

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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb von Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., Zhang, Y.-H.

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Four-band quantum well infrared photodetector array von Bandara, S.V., Gunapala, S.D., Liu, J.K., Rafol, S.B., Ting, D.Z., Mumolo, J.M., Chuang, R.W., Trinh, T.Q., Liu, J.H., Choi, K.K., Jhabvala, M., Fastenau, J.M., Liu, W.K.

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox von Jain, V, Lobisser, E, Baraskar, A, Thibeault, B J, Rodwell, M J W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K

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Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si von Taghipour, Z., Rogers, V., Ringel, B., Liu, A.W.K., Fastenau, J.M., Lubyshev, D., Nelson, S.A., Krishna, S.

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers von Baklenov, O., Lubyshev, D., Wu, Y., Fang, X.-M., Fastenau, J. M., Leung, L., Towner, F. J., Cornfeld, A. B., Liu, W. K.

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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing von Djie, H.S., Wang, D.-N., Ooi, B.S., Hwang, J.C.M., Fang, X.-M., Wu, Y., Fastenau, J.M., Liu, W.K.

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