Commissioning of the hybrid multibend achromat lattice at the European Synchrotron Radiation Facility von Raimondi, P., Carmignani, N., Carver, L. R., Chavanne, J., Farvacque, L., Le Bec, G., Martin, D., Liuzzo, S. M., Perron, T., White, S.

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First simultaneous measurement of sextupolar and octupolar resonance driving terms in a circular accelerator from turn-by-turn beam position monitor data von Franchi, A., Farvacque, L., Ewald, F., Le Bec, G., Scheidt, K. B.

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Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode von Boucherit, M., Soltani, A., Rousseau, M., Farvacque, J.-L., DeJaeger, J.-C.

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ESRF-EBS lattice model with canted beamlines von Liuzzo, S M, Carmignani, N, Chavanne, J, Farvacque, L, Perron, T, Raimondi, P, White, S

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Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells von Carosella, F, Farvacque, J-L

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Vertical emittance reduction and preservation in electron storage rings via resonance driving terms correction von Franchi, A., Farvacque, L., Chavanne, J., Ewald, F., Nash, B., Scheidt, K., Tomás, R.

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High gradient quadrupoles for low emittance storage rings von Le Bec, G., Chavanne, J., Benabderrahmane, C., Farvacque, L., Goirand, L., Liuzzo, S., Raimondi, P., Villar, F.

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Indirect interband transition in hexagonal GaN von Lancry, O, Farvacque, J-L, Pichonat, E, Gaquière, C

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The LUNEX5 project in France von Couprie, M E, Benabderrahmane, C, Betinelli, P, Bouvet, F, Buteau, A, Cassinari, L, Daillant, J, Denard, J C, Eymard, P, Gagey, B, Herbeaux, C, Labat, M, Lagarde, B, Lestrade, A, Loulergue, A, Marchand, P, Marlats, J L, Miron, C, Morin, P, Nadji, A, Polack, F, Pruvost, J B, Ribeiro, F, Ricaud, J P, Roy, P, Tanikawa, T, Roux, R, Bielawski, S, Evain, C, Szwaj, C, Lambert, G, Lifschitz, A, Malka, V, Lehe, R, Rousse, A, Phuoc, K Ta, Thaury, C, Devanz, G, Luong, M, Carré, B, LeBec, G, Farvacque, L, Dubois, A, Lüning, J

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Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts von Dassonneville, S., Amokrane, A., Sieber, B., Farvacque, J.-L., Beaumont, B., Gibart, P.

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Tracking studies of top-up injection for a safe operation of the ESRF-EBS von Liuzzo, S.M., Berkvens, P., Carmignani, N., Chavanne, J., Farvacque, L., Versteegen, R.

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2DEG Mobility in AlGaN-GaN Structures Grown by LP-MOVPE von Bougrioua, Z., Farvacque, J.-L., Moerman, I., Carosella, F.

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Material optimisation for AlGaN/GaN HFET applications von Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C.

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Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors von Farvacque, J.-L., François, P.

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Free carrier mobility in AlGaN/GaN quantum wells von Farvacque, J-L, Bougrioua, Z, Carosella, F, Moerman, I

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Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE von Bougrioua, Z., Farvacque, J.-L., Moerman, I., Demeester, P., Harris, J.J., Lee, K., van Tendeloo, G., Lebedev, O., Thrush, E.J.

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Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam von Dassonneville, S., Amokrane, A., Sieber, B., Farvacque, J.-L., Beaumont, B., Gibart, P., Ganiere, J.-D., Leifer, K.

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Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation von Amokrane, A, Dassonneville, S, Sieber, B, Farvacque, J-L, Beaumont, B, Bousquet, V, Gibart, P, Ganiere, J-D, Leifer, K

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Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire von Dassonneville, S, Amokrane, A, Sieber, B, Farvacque, J.-L, Beaumont, B, Bousquet, V, Gibart, P, Leifer, K, Ganiere, J.-D

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Definition of a collision time tensor for electric transport in the presence of anisotropic scattering mechanisms. Application to the case of dislocation scattering in GaAs von Farvacque, J -L

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