Photodegradation of melanin by an interferometric technique von FARLEY, C. W, KASSU, A, SHARMA, A

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Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors von WILLIAMS, G. M, DEWAMES, R. E, FARLEY, C. W, ANDERSON, R. J

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Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy von Waldrop, J. R., Kraut, E. A., Farley, C. W., Grant, R. W.

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Low dark current infrared hot-electron transistor for 77 K operation von Choi, K. K., Tidrow, M. Z., Taysing-Lara, M., Chang, W. H., Kuan, C. H., Farley, C. W., Chang, F.

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A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's von Farley, C.W., Wang, K.C., Chang, M.F., Asbeck, P.M., Nubling, R.B., Sheng, N.H., Pierson, R., Sullivan, G.J.

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Simulation of anomalous acceptor diffusion in compound semiconductors von FARLEY, C. W, STREETMAN, B. G

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High-bandwidth OEIC receivers using heterojunction bipolar transistors: Design and demonstration von Pedrotti, K.D., Pierson, R.L., Sheng, N.H., Nubling, R.B., Farley, C.W., Chang, M.F.

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The role of defects in the diffusion and activation of impurities in ion implanted semiconductors von FARLEY, C. W, STREETMAN, B. G

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Type conversion in close contact rapid thermal annealing of Si-implanted InP von FARLEY, C. W, STREETMAN, B. G

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Phosphorus-overpressure rapid thermal annealing of indium phosphide von ANANTH DODABALAPUR, FARLEY, C. W, LESTER, S. D, KIM, T. S, STREETMAN, B. G

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LWIR 128x128 GaAs/AlGaAs multiple quantum well hybrid focal plane array von Kozlowski, L J, Williams, G M, Sullivan, G J, Farley, C W, Anderson, R J, Chen, J, Cheung, D T, Tennant, W E, DeWames, R E

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Simulation of anomalous Be diffusion in semi-insulating InP von FARLEY, C. W, STREETMAN, B. G

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Temperature response of GaAs in a rapid thermal annealing system von BLOCK, T. R, FARLEY, C. W, STREETMAN, B. G

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Complex compensation of Ge pulse-diffused into GaAs von FARLEY, C. W, KIM, T. S, LESTER, S. D, STREETMAN, B. G, ANTHONY, J. M

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Pulse diffusion of Ge into GaAs von LESTER, S. D, FARLEY, C. W, KIM, T. S, STREETMAN, B. G, ANTHONY, J. M

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Multicolor infrared detection using a voltage tunable bandpass filter von Tidrow, M. Z., Choi, K. K., Farley, C. W., Chang, F.

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Highly doped GaInAs using diethylberyllium by MOCVD for InP-based heterostructure bipolar transistor applications von MCDERMOTT, B. T, SEABURY, C. W, FARLEY, C. W, HIGGINS, J. A

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Suppression of partition noise in infrared hot-electron transistors von Kuan, C. H., Choi, K. K., Chang, W. H., Farley, C. W., Chang, F.

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High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InP von Sullivan, G. J., Farley, C. W., Ho, W. J., Pierson, R. L., Szwed, M. K., Lind, M. D., Bernescut, R. L.

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Co-implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GAAs: Cr von FARLEY, C. W, KIM, T. S, STREETMAN, B. G

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