Investigation of the physical modeling of the gate-depletion effect von Habas, P., Faricelli, J.V.

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A new technique for measuring MOSFET inversion layer mobility von Huang, C.-L., Faricelli, J.V., Arora, N.D.

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An accurate gate length extraction method for sub-quarter micron MOSFET's von Cheng-Liang Huang, Faricelli, J.V., Antoniadis, D.A., Khalil, N.A., Rios, R.A.

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Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors von Doyle, B.S., Mistry, K.R., Faricelli, J.

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Fabrication and analysis of 1/2µm Silicon logic MESFET's von Nulman, J., Faricelli, J.V., Krusius, J.P., Frey, J.

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Fabrication and analysis of 1/2 μm silicon logic MESFET's von NULMAN, J, FARICELLI, J. V, KRUSIUS, J. P, FREY, J

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The chromosome region including the earliness per se locus Eps-A[sup]m1 affects the duration of early developmental phases and spikelet number in diploid wheat von Lewis, S, Faricelli, M E, Appendino, M L, Valárik, M, Dubcovsky, J

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IIA-9 1/2 µm Si MESFET logic devices von Nulman, J., Faricelli, J., Krusius, P.

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IIB-8 Large signal switching response of submicron Si and GaAs MESFET's: Device vs circuit von Faricelli, J., Nulman, J., Krusius, P., Frey, J.

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The extraction of two-dimensional MOS transistor doping via inverse modeling von Khalil, N., Faricelli, J., Bell, D., Selberherr, S.

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Physical basis of short-channel MESFET operation II: Transient behavior von Faricelli, J.V., Frey, J., Krusius, J.P.

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Two-and three-dimensional analytical solutions for post-anneal implant profiles through arbitrary mask edges von Krusius, J.P., Nulman, J., Faricelli, J.V., Frey, J.

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Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate technique von Doyle, B.S., Faricelli, J., Mistry, K.R., Vuillaume, D.

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Inverse modeling profile determination: implementation issues and recent results von Khalil, N., Faricelli, J.

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Numerical verification of substrate current model in silicon IGFETs von Faricelli, John, Gildenblat, Gennady

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A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications von Rios, R., Arora, N.D., Cheng-Liang Huang, Khalil, N., Faricelli, J., Gruber, L.

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Numerical verification of substrate current model in silicon IGFETS : J. Faricelli and G. Gildenblat. Solid-St. Electron.30, 655 (1987)

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IIA-9 1/2 mum Si MESFET logic devices von Nulman, J, Faricelli, J, Krusius, P

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Fabrication and analysis of 1/2mum Silicon logic MESFET's von Nulman, J, Faricelli, J V, Krusius, J P, Frey, J

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Fabrication and analysis of 1/2 micron silicon logic MESFET's von Nulman, J, FARICELLI, J V, Krusius, J P, Frey, J

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