The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes von Farhi, G, Morris, D, Charlebois, S A, Raskin, J-P

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Electrical characteristics and simulations of self-switching-diodes in SOI technology von Farhi, G., Saracco, E., Beerens, J., Morris, D., Charlebois, S.A., Raskin, J.-P.

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Broad-band frequency characterization of double Y-branch nanojunction operating as room-temperature RF to DC rectifier von Bednarz, L., Rashmi, Hackens, B., Farhi, G., Bayot, V., Huynen, I.

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Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements von Farhi, G, Aoucher, M, Mohammed-Brahim, T

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Quantum transport, anomalous dephasing, and spin-orbit coupling in an open ballistic bismuth nanocavity von Hackens, B., Minet, J. P., Faniel, S., Farhi, G., Gustin, C., Issi, J. P., Heremans, J. P., Bayot, V.

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Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature von Cherfi, R., Farhi, G., Aoucher, M., Zellama, K.

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Weak antilocalization and UCFs in an open bismuth quantum dot von Hackens, B., Minet, J.P., Farhi, G., Faniel, G., Gustin, C., Bayot, V.

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Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering von Aoucher, M, Farhi, G, Mohammed-Brahim, T

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Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films von Cherfi, R., Aoucher, M., Zellama, K., Farhi, G.

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Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature von Rashmi, Bednarz, Lukasz, Hackens, Benoit, Farhi, Ghania, Bayot, Vincent, Huynen, Isabelle

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Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate von Mohammed-Brahim, T., Aoucher, M., Farhi, G.

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Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate von Cherfi, R., Aoucher, M., Farhi, G.

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Low and room temperature studies of RF to DC rectifiers based on ballistic transport von Bednarz, Lukasz, Rashmi, Hackens, Benoît, Farhi, Ghania, Bayot, Vincent, Huynen, Isabelle, Galloo, Jean-Sébastien, Roelens, Yannick, Bollaert, Sylvain, Cappy, Alain

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Large graphs with given degree and diameter. II von Bermond, J.C, Delorme, C, Farhi, G

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First Report on Self-Switching-Diodes in SOI von Farhi, G., Beerens, J., Morris, D., Charlebois, S.A., Raskin, J.P.

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Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering von AOUCHER, M, FARHI, G, MOHAMMED-BRAHIM, T

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Tunable nonlinear current-voltage characteristic in four-terminal ballistic nano-junctions von Hackens, B, Gence, L, Farhi, G, Faniel, S, Gustin, C, Bayot, V, Wallart, X, Bollaert, S, Cappy, A, Vasallo, B G, Mateos, J, Gonzalez, T

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Influence of carriers injection conditions on current-voltage characteristic of InGaAs/InAlAs-based three-terminal ballistic junctions von Farhi, G, Hackens, B, Faniel, S, Gustin, C, Bayot, V, Wallart, X, Bollaert, S, Cappy, A, Vasallo, B G, Mateos, J, Gonzalez, T

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Large Graphs with Given Degree and Diameter-Part I von Delorme, Farhi

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Large graphs with given degree and diameter von DELORME, C, FARHI, G

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