Natural Convection Heat Transfer in 2D and 3D Trapezoidal Enclosures Filled with Nanofluid von Akbarzadeh, P., Fardi, A. H.

Volltext

Manual removal or spontaneous placental delivery and postcesarean endometritis and bleeding von Dehbashi, S, Honarvar, M, Fardi, F.H

Volltext

Modeling the DC gain of 4H–SiC bipolar transistors as a function of surface recombination velocity von Fardi, H.Z.

Volltext

Comparison of 3C-SiC and 4H-SiC Power MOSFETs von Van Zeghbroeck, Bart J., Fardi, Hamid

Volltext

Detailed formulation of energy balance equations in single quantum well devices von Fardi, H.Z.

Volltext

Simulation and modeling of p-n-p-n optical switches von Fardi, H.Z.

Volltext

Numerical modeling of hot electron GaAs/AlxGa1−xAs quantum well photovoltaic von Fardi, H Z

Volltext

Effect of multiple reflection propagation on photon recycling in GaAs/AlGaAs double heterostructures von Miller, K. L., Fardi, H. Z., Hayes, R. E.

Volltext

Permanent-magnet-free stabilization and sensitivity tailoring of magnetoresistive field sensors von Halloran, S. T., da Silva, F. C. S., Fardi, H. Z., Pappas, D. P.

Volltext

Analog behavioral modeling of magnetoresistive sensors von Fardi, H, Alaghband, G

Volltext

Magnetization scissoring in aluminum/Permalloy microstructures von Yuan, L., Wisbey, D. S., Halloran, S. T., Pappas, D. P., da Silva, F. C. S., Fardi, H. Z.

Volltext

Design and simulation of Multi-Quantum-Well GaAs/AlGaAs single junction p-i-n with back surface DBR reflector von Fardi, H., Jan, M., Van Zeghbroeck, B.

Volltext

Permanent-magnet-free stabilization and sensitivity tailoringof magnetoresistive field sensors von Halloran, S. T., da Silva, F. C. S., Fardi, H. Z., Pappas, D. P.

Volltext

Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device von Fardi, H.Z.

Volltext

Effects of electron trapping on diffusion time-of-flight measurement in GaAs von Fardi, H.Z

Volltext

Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation von Fardi, H.Z., Hayes, R.E.

Volltext

Numerical modeling of energy balance equations in quantum well Al(x)Ga(1-x)As/GaAs p-i-n photodiodes von Fardi, H Z, Winston, D W, Hayes, R E, Hanna, M C

Volltext

Numerical modeling of energy balance equations in quantum well Al sub(x)Ga sub(1-x)As/GaAs p-i-n photodiodes von Fardi, Hamid Z, Winston, David W, Hayes, Russell E, Hanna, Mark C

Volltext

Modeling submicrometer GaAs MEFET's using PISCES with an apparent gate-length-dependent velocity-field relation von FARDI, H. Z, HAYES, R. E

Volltext

Numerical modelling and characterization of high-frequency high-power high-temperature GaN/SiC heterostructure bidolar transistors von FARDI, H. Z, ALAGHBAND, G, PANKOVE, J. I

Volltext