Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries von Farahmand, M., Garetto, C., Bellotti, E., Brennan, K.F., Goano, M., Ghillino, E., Ghione, G., Albrecht, J.D., Ruden, P.P.

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Materials theory based modeling of wide band gap semiconductors: from basic properties to devices von Brennan, Kevin F, Bellotti, Enrico, Farahmand, Maziar, Haralson, Joe, Ruden, P.Paul, Albrecht, John D, Sutandi, Agust

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Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates von Farahmand, M., Brennan, K.F.

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Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation von Farahmand, M., Brennan, K.F.

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Monte Carlo simulation of noncubic symmetry semiconducting materials and devices von Brennan, K.F., Bellotti, E., Farahmand, M., Nilsson, H.-E., Ruden, P.P., Yumin Zhang

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Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors) von Farahmand, Maziar, Weber, Michael, Tirino, Louis, Brennan, Kevin F, Ruden, P Paul

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Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs von Farahmand, M., Brennan, K.F., Gebara, E., Deukhyoun Heo, Young Suh, Laskar, J.

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Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs von Weber, M, Tirino, L, Brennan, K.F, Farahmand, Maziar

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Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs von Farahmand, Maziar, Brennan, Kevin F.

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Wearable, battery-powered, wireless, programmable 8-channel neural stimulator von Farahmand, S., Vahedian, H., Abedinkhan Eslami, Maziar, Sodagar, A. M.

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