Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs von Faqir, M., Verzellesi, G., Meneghesso, G., Zanoni, E., Fantini, F.

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Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation von Chini, A., Di Lecce, V., Fantini, F., Meneghesso, G., Zanoni, E.

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Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers von Chini, Alessandro, Meneghesso, Gaudenzio, Meneghini, Matteo, Fantini, Fausto, Verzellesi, Giovanni, Patti, Alfonso, Iucolano, Ferdinando

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Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Fantini, Fausto, Chini, Alessandro

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters: Group III Nitride... von DI LECCE, Valerio, ESPOSTO, Michele, BONAIUTI, Matteo, FANTINI, Fausto, MENEGHESSO, Gaudenzio, ZANONI, Enrico, CHINI, Alessandro

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Fantini, Fausto, Meneghesso, Gaudenzio, Zanoni, Enrico, Chini, Alessandro

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Editorial von Fantini, Fausto, Vanzi, Massimo

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Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's von Borgarino, M., Menozzi, R., Baeyens, Y., Cova, P., Fantini, F.

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Breakdown walkout in pseudomorphic HEMT's von Menozzi, R., Cova, P., Canali, C., Fantini, F.

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Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs von Saguatti, Davide, Mohamad Isa, Muammar, Ian, Ka Wa, Chini, Alessandro, Verzellesi, Giovanni, Fantini, Fausto, Missous, Mohamed

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Study of GaN HEMTs electrical degradation by means of numerical simulations von Di Lecce, V, Esposto, M, Bonaiuti, M, Fantini, F, Chini, A

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Electromigration in thin-film interconnection lines: models, methods and results von Scorzoni, Andrea, Neri, Bruno, Caprile, Candida, Fantini, Fausto

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The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs von Borgarino, M., Bary, L., Vescovi, D., Menozzi, R., Monroy, A., Laurens, M., Plana, R., Fantini, F., Graffeuil, J.

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Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's von Borgarino, M., Plana, R., Delage, S.L., Fantini, F., Graffeuil, J.

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PII: S0026-2714(99)00179-1

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Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability von Christou, Aris, Fantini, Fausto

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Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors von Borgarino, Mattia, Salviati, Giancarlo, Cattani, Laura, Lazzarini, Laura, Fregonara, Carlo Zanotti, Fantini, Fausto, Carnera, Alberto

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Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBTs von Busani, M., Menozzi, R., Borgarino, M., Fantini, F.

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A study of hot-electron degradation effects in pseudomorphic HEMTs von Cova, Paolo, Menozzi, Roberto, Fantini, Fausto, Pavesi, Maura, Meneghesso, Gaudenzio

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Thermal stability of [formula omitted] gate [formula omitted] HEMT's von de Munari, Ilaria, Fantini, Fausto, Conti, Paolo

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