Influence of post-annealing treatment on the structure properties of ZnO films von Fang, Z.B., Yan, Z.J., Tan, Y.S., Liu, X.Q., Wang, Y.Y.

Volltext

Structure and electrical characterization of amorphous ErSiO films deposited by rf magnetron sputtering on Si (001) von Fang, Z. B., Zhu, Y. Y., Chen, W.

Volltext

Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor von He, G, Sun, Z Q, Ma, Y Q, Wu, M Z, Liu, Y M, Shi, S W, Li, G, Chen, X S, Zhang, L D, Fang, Z B

Volltext

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates von ZHU, Y. Y, XU, R, CHEN, S, FANG, Z. B, XUE, F, FAN, Y. L, YANG, X. J, JIANG, Z. M

Volltext

A model for the frequency dispersion of the high- k metal-oxide-semiconductor capacitance in accumulation von Yao, B., Fang, Z. B., Zhu, Y. Y., Ji, T., He, G.

Volltext

Transparent conductive Tb-doped ZnO films prepared by rf reactive magnetron sputtering von Fang, Z.B., Tan, Y.S., Gong, H.X., Zhen, C.M., He, Z.W., Wang, Y.Y.

Volltext

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation von Gao, J., He, G., Fang, Z.B., Lv, J.G., Liu, M., Sun, Z.Q.

Volltext

A Review on Seismic Response and Aseismic Measures of Fault-crossing Tunnels von Zhang, L F, Li, R H, Liu, H, Fang, Z B, Wang, H B, Y, Yuan, Yu, H T

Volltext

Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics von Jiang, S.S., He, G., Fang, Z.B., Wang, P.H., Liu, Y.M., Lv, J.G., Liu, M.

Volltext

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy von Wang, J.J., Fang, Z.B., Ji, T., Ren, W.Y., Zhu, Y.Y., He, G.

Volltext

Dynamic Response and Perturbation Design of Surrounding Rock in Blasting Construction of Small Radius Spiral Tunnel von Fang, Z B, Yan, Q, Sun, X D, Fu, D, Zhang, X X, Liu, X, Qi, N

Volltext

Single crystalline Tm2O3 films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy von JI, T, CUI, J, FANG, Z. B, NIE, T. X, FAN, Y. L, LI, X. L, HE, Q, JIANG, Z. M

Volltext

Temperature effects on the growth and electrical properties of Er2O3 films on Ge substrates von Ji, T., Nie, T.X., Cui, J., Fang, Z.B., Yang, X.J., Fan, Y.L., Zhong, Z.Y., Jiang, Z.M.

Volltext

Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001) by reactive evaporation von Fang, Z B, Chen, S, Zhu, Y Y, Wu, Y Q, Fan, Y L, Wang, Y Y, Jiang, Z M

Volltext

Band offsets of Er2O3 films epitaxially grown on Si substrates von Zhu, Y. Y., Chen, S., Xu, R., Fang, Z. B., Zhao, J. F., Fan, Y. L., Yang, X. J., Jiang, Z. M.

Volltext

Boron Particle Ignition in Secondary Chamber of Ducted Rocket von Zhang, W. H., Hu, J. X., Huang, L. Y., Wang, D. Q., Fang, Z. B., Xia, Z. X.

Volltext

Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures von Zhu, Y. Y., Fang, Z. B., Chen, S., Liao, C., Wu, Y. Q., Fan, Y. L., Jiang, Z. M.

Volltext

In situ Photoemission Study on Initial Growth of Er2O3 Films on Si(001) von Zhu, Y.Y., Chen, Shu, Jiang, Z.M., Liao, C., Fang, Z.B.

Volltext

Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics von Jin, P., He, G., Fang, Z.B., Liu, M., Xiao, D.Q., Gao, J., Jiang, S.S., Li, W.D., Sun, Z.Q., Zhang, M.

Volltext

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy von He, G., Chen, X.F., Lv, J.G., Fang, Z.B., Liu, Y.M., Zhu, K.R., Sun, Z.Q., Liu, M.

Volltext