A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate von Liu, Bo (波刘), Feng, Zhihong (志红冯), Zhang, Sen (森张), Dun, Shaobo (少博敦), Yin, Jiayun (甲运尹), Li, Jia (佳李), Wang, Jingjing (晶晶王), Zhang, Xiaowei (效帏张), Fang, Yulong (玉龙房), Cai, Shujun (树军蔡)

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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz von 徐鹏 宋旭波 吕元杰 王元刚 敦少博 尹甲运 房玉龙 顾国栋 冯志红 蔡树军

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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors von 房玉龙 敦少博 刘波 尹甲运 蔡树军 冯志红

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