Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells von Voronkov, V. V., Falster, R.

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Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation von Murphy, J.D., McGuire, R.E., Bothe, K., Voronkov, V.V., Falster, R.J.

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The effect of oxide precipitates on minority carrier lifetime in n -type silicon von Murphy, J. D., Al-Amin, M., Bothe, K., Olmo, M., Voronkov, V. V., Falster, R. J.

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Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon von Walter, D. C., Lim, B., Bothe, K., Voronkov, V. V., Falster, R., Schmidt, J.

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Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates von Bothe, K., Falster, R. J., Murphy, J. D.

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On the equilibrium concentration of boron-oxygen defects in crystalline silicon von Walter, D.C., Falster, R., Voronkov, V.V., Schmidt, J.

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In-situ characterization of electron-assisted regeneration of Cz-Si solar cells von Helmich, L., Walter, D.C., Bredemeier, D., Falster, R., Voronkov, V.V., Schmidt, J.

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On the mechanism of recombination at oxide precipitates in silicon von Murphy, J. D., Bothe, K., Voronkov, V. V., Falster, R. J.

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Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon von Murphy, J. D., Bothe, K., Krain, R., Voronkov, V. V., Falster, R. J.

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Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon von WALTER, D. C, LIM, B, BOTHE, K, FALSTER, R, VORONKOV, V. V, SCHMIDT, J

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Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion von Murphy, J. D., McGuire, R. E., Bothe, K., Voronkov, V. V., Falster, R. J.

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Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species von Voronkov, V. V., Falster, R., Pichler, P.

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Intrinsic point defects and impurities in silicon crystal growth von VORONKOV, V. V, FALSTER, R

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Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening von Voronkov, V. V., Falster, R., Lim, B., Schmidt, J.

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Comment on “Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited” [J. Appl. Phys. 110, 063519 (2011)] von Voronkov, V. V., Falster, R.

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The effect of oxide precipitates on minority carrier lifetime in p-type silicon von Murphy, J. D., Bothe, K., Olmo, M., Voronkov, V. V., Falster, R. J.

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Determination of the bulk lifetime of bare multicrystalline silicon wafers von Bothe, K., Krain, R., Falster, R., Sinton, R.

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Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing von Voronkov, V. V., Falster, R., Kim, TaeHyeong, Park, SoonSung, Torack, T.

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Benchmarking Second Order Methods for the Calculation of Vertical Electronic Excitation Energies: Valence and Rydberg States in Polycyclic Aromatic Hydrocarbons von Falden, Heidi H, Falster-Hansen, Kasper R, Bak, Keld L, Rettrup, Sten, Sauer, Stephan P. A

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Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon von Voronkov, V.V., Falster, R.

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