Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures von Boley, Allison, Luna, Esperanza, Zhang, C., Faleev, N., Honsberg, C.B., Smith, David J.

Volltext

Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell von Jampana, B.R., Melton, A.G., Jamil, M., Faleev, N.N., Opila, R.L., Ferguson, I.T., Honsberg, C.B.

Volltext

Vibrational properties of AlN grown on (111)-oriented silicon von Prokofyeva, T., Seon, M., Vanbuskirk, J., Holtz, M., Nikishin, S. A., Faleev, N. N., Temkin, H., Zollner, S.

Volltext

Citrobacter freundii Methionine γ-Lyase: The Role of Serine 339 in the Catalysis of γ- and β-Elimination Reactions von Anufrieva, N V, Morozova, E A, Revtovich, S V, Bazhulina, N P, Timofeev, V P, Tkachev, Ya V, Faleev, N G, Nikulin, A D, Demidkina, T V

Volltext

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A.Yu, Honsberg, C.

Volltext

All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides von Tokranov, V., Madisetti, S., Yakimov, M., Nagaiah, P., Faleev, N., Oktyabrsky, S.

Volltext

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy von Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., Honsberg, Christiana B.

Volltext

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscop... von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D.J., Honsberg, C.

Volltext

High growth speed of gallium nitride using ENABLE-MBE von Williams, J.J., Fischer, A.M., Williamson, T.L., Gangam, S., Faleev, N.N., Hoffbauer, M.A., Honsberg, C.B.

Volltext

Applications of dynamical theory of X‐ray diffraction by perfect crystals to reciprocal space mapping von Punegov, Vasily I., Pavlov, Konstantin M., Karpov, Andrey V., Faleev, Nikolai N.

Volltext

Kinetic and spectral parameters of interaction of Citrobacter freundii methionine γ-lyase with amino acids von Morozova, E. A., Bazhulina, N. P., Anufrieva, N. V., Mamaeva, D. V., Tkachev, Y. V., Streltsov, S. A., Timofeev, V. P., Faleev, N. G., Demidkina, T. V.

Volltext

The Catalytic Mechanisms of the Reactions between Tryptophan Indole-Lyase and Nonstandard Substrates: The Role of the Ionic State of the Catalytic Group Accepting the Cα Proton of... von Faleev, N G, Tsvetikova, M A, Gogoleva, O I, Kulikova, V V, Revtovich, S V, Kochetkov, K A

Volltext

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures von Maros, Aymeric, Faleev, Nikolai N., Bertoni, Mariana I., Honsberg, Christiana B., King, Richard R.

Volltext

Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates von Ahmad, I., Holtz, M., Faleev, N. N., Temkin, H.

Volltext

Experimental and theoretical study of acceptor activation and transport properties in p -type AlxGa1−xN/GaN superlattices von Goepfert, I. D., Schubert, E. F., Osinsky, A., Norris, P. E., Faleev, N. N.

Volltext

Growth of high crystal quality InN by ENABLE-MBE von Williams, Joshua J., Williamson, Todd L., Hoffbauer, Mark A., Wei, Yong, Faleev, Nikolai N., Honsberg, Christiana

Volltext

Strain and crystal defects in thin AlN/GaN structures on (0001) SiC von Faleev, N., Levin, I.

Volltext

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties von Karow, Matthias M., Faleev, Nikolai N., Maros, Aymeric, Honsberg, Christiana B.

Volltext

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well von Kim, Yeongho, Faleev, Nikolai N, Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, Honsberg, Christiana B

Volltext

A new approach to wide-angle dynamical X-ray diffraction by deformed crystals von Podorov, S. G., Faleev, N. N., Pavlov, K. M., Paganin, D. M., Stepanov, S. A., Förster, E.

Volltext