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  1. 1
    A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure

    A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure von Fajii, E., Judai, Y., Ito, T., Kutsunai, T., Nagano, Y., Noma, A., Nasu, T., Izutsu, Y., Mikawa, T., Yasuoka, H., Azuma, M., Shimada, Y., Sasai, Y., Sato, K., Otsuki, T.


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  2. 2
    A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure

    A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure von Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T


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