Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry von Carbonetto, S. H., Garcia Inza, Mariano A., Lipovetzky, J., Redin, E. G., Salomone, L. S., Faigon, A.

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Electrically Erasable Metal-Oxide-Semiconductor Dosimeters von Lipovetzky, J., Redin, E.G., Faigon, A.

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Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process von Carbonetto, Sebastian, Echarri, Martin, Lipovetzky, Jose, Garcia-Inza, Mariano, Faigon, Adrian

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Radiation Sensor Based on MOSFETs Mismatch Amplification for Radiotherapy Applications von Garcia-Inza, Mariano, Carbonetto, Sebastian H., Lipovetzky, Jose, Faigon, Adrian

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Electrical Correlation of Double-Diffused MetalaOxideaSemiconductor Transistors Exposed to Gamma Photons, Protons, and Hot Carriers von Palumbo, Felix, Faigon, Adrian, Curro, Giuseppe

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Electrical Correlation of Double-Diffused Metal-Oxide-Semiconductor Transistors Exposed to Gamma Photons, Protons, and Hot Carriers von Palumbo, F, Faigon, A, Curro, G

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Neutron‐gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer von Gimenez, Melisa Lucía, Lipovetzky, José, Alcalde Bessia, Fabricio, Longhino, Juan Manuel, Tartaglione, Aureliano, Garcia‐Inza, Mariano Andrés, Blostein, Juan Jerónimo, Carbonetto, Sebastián, Gómez Berisso, Mariano, Pérez, Martín, Sidelnik, Iván, Redin, Eduardo Gabriel, Faigón, Adrián

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Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization von Faigon, A., Lipovetzky, J., Redin, E., Krusczenski, G.

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Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement von Inza, M G, Lipovetzky, J, Redin, E G, Carbonetto, S, Faigon, A

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Reducing Measurement Uncertainties Using Bias Cycled Measurement in MOS Dosimetry at Different Temperatures von Lipovetzky, Jose, Redin, Eduardo Gabriel, Inza, Mariano Andres Garcia, Carbonetto, Sebastian, Faigon, Adrian

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Numerical modeling of radiation-induced charge loss in CMOS floating gate cells von Faigón, Adrián, Sambuco Salomone, Lucas, Carbonetto, Sebastián, García Inza, Mariano

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Electrical characterization of reoxidized nitrided silicon films on silicon von FAIGON, A, SHAPPIR, J

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Canonical formulation of Thermodynamics, and corresponding wave equation for far from equilibrium case von Faigon, Adrian

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Effect of the Inclusion of Lead on the Dielectric Response of Doped Titanates von Ruiz, María S., Fano, Walter G., Faigón, Adrián N., Razzitte, Adrián C.

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Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique von Palumbo, Felix, Faigon, Adrian N., Campabadal, Francesca

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Canonical formulation of Thermodynamics, and corresponding wave equation for far from equilibrium case von Faigon, Adrian

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Uncertainty and information in classical mechanics formulation. Common ground for thermodynamics and quantum mechanics von Faigon, Adrian

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Uncertainty and information in classical mechanics formulation. Common ground for thermodynamics and quantum mechanics von Faigon, Adrian

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Physics of the Observable. Mechanics von Faigon, Adrian

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Physics of the Observable. Mechanics von Faigon, Adrian

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