Thickness Dependence of Resistivity and Optical Reflectance of ITO Films von Mei-Zhen, Gao, R, Job, De-Sheng, Xue, R, Fahrner W

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Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells von Hussein, R, Borchert, D, Grabosch, G, Fahrner, W.R

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Nanotechnology and Nanoelectronics: Materials, Devices, Measurement Techniques von Fahrner, W. R

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Sensors and smart electronics in harsh environment applications von FAHRNER, W. R, JOB, R, WERNER, M

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Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications von Werner, M.R., Fahrner, W.R.

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Three-layer structure of hydrogenated Czochralski silicon von MA, Y, JOB, R, HUANG, Y. L, FAHRNER, W. R, BEAUFORT, M. F, BARBOT, J. F

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Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor von FINK, D, CHANDRA, A, OPITZ-COUTUREAU, J, FAHRNER, W. R, HOPPE, K, PAPALEO, R. M

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Dependence of hydrogen diffusion on the electric field in p-type silicon von HUANG, Y. L, WDOWIAK, B, JOB, R, MA, Y, FAHRNER, W. R

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Resistance of ion track based electronic structures to high voltage and radiation von Fink, D, Chandra, A, Fahrner, W R, Hoppe, K, Opitz-Coutureau, J, Bundesmann, J

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Dissociation, transformation, and recombination of Si-H bonds in hydrogenated crystalline silicon determined by in situ micro-Raman spectroscopy von MA, Y, HUANG, Y. L, JOB, R, FAHRNER, W. R

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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step von SIMOEN, E, CLAEYS, C, JOB, R, ULYASHIN, A. G, FAHRNER, W. R, TONELLI, G, DE GRVSE, O, CLAUWS, P

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Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon von Ulyashin, A G, Job, R, Fahrner, W R, Richard, O, Bender, H, Claeys, C, Simoen, E, Grambole, D

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Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon von JOB, R, ULYASHIN, A. G, FAHRNER, W. R, IVANOV, A. I, PALMETSHOFER, L

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Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure von Landi, G., Fahrner, W. R., Concilio, S., Sessa, L., Neitzert, H. C.

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Thermochemical beveling of CVD diamond films intended for precision cutting and measurement applications von Weima, J.A, Job, R, Fahrner, W.R

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Thermochemical polishing of CVD diamond films von Zaitsev, A.M., Kosaca, G., Richarz, B., Raiko, V., Job, R., Fries, T., Fahrner, W.R.

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Quantitative analysis of carbon distribution in steel used for thermochemical polishing of diamond films von WEIMA, J. A, VON BORANY, J, KREISSIG, U, FAHRNER, W. R

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Trapping of hydrogen in argon-implanted crystalline silicon von Ma, Y., Job, R., Düngen, W., Huang, Y. L., Fahrner, W. R., Beaufort, M. F., Rousselet, S., Horstmann, J. T.

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Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations von Mudryi, A.V, Patuk, A.I, Shakin, I.A, Ulyashin, A.G, Job, R, Fahrner, W.R, Fedotov, A, Mazanik, A, Drozdov, N

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Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells von Fahrner, W. R., Goesse, R., Scherff, M., Mueller, T., Ferrara, M., Neitzert, H. C.

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