Modeling of a vertical tunneling transistor based on Gr-hBN-χ3 borophene heterostructure von Abbasi, Reza, Faez, Rahim, Horri, Ashkan, Moravvej-Farshi, Mohammad Kazem

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Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons von Karamitaheri, Hossein, Neophytou, Neophytos, Pourfath, Mahdi, Faez, Rahim, Kosina, Hans

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The most optimal barrier height of InGaN light-emitting diodes von Alam Varzaneh Isfahani, Mohammad Hossein, Faez, Rahim

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A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio von Marjani, Saeid, Hosseini, Seyed Ebrahim, Faez, Rahim

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DFT-Based Tight-binding model of vdW bilayer χ3 and β12 borophene von Abbasi, Reza, Faez, Rahim

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Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness von Chaghazardi, Zahra, Touski, Shoeib Babaee, Pourfath, Mahdi, Faez, Rahim

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The geometric structure and electronic properties of van der Waals C-Borophane/h-BC6N/Graphene heterostructure: A first-principles study von Abbasi, Reza, Horri, Ashkan, Faez, Rahim

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Full-Quantum Simulation of Graphene Self-Switching Diodes von Horri, Ashkan, Faez, Rahim

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Lateral BN-BCN Heterostructure Tunneling Transistor with Large Current Modulation von Horri, Ashkan, Faez, Rahim

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Corrigendum to `Pressure effect on the mechanical and electronic properties of B 3 N 3: A first-principle study' [Physica C: Superconductivity and its applications 548 (2018) 50–54... von Bagheri, Mohammad, Faez, Rahim

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Minimum length modulator design with a graphene-based plasmonic waveguide von Ghahri, Muhammad Reza, Faez, Rahim

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Pressure effect on the mechanical and electronic properties of B3N3: A first-principle study von Bagheri, Mohammad, Faez, Rahim

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Pressure effect on the mechanical and electronic properties of B^sub 3^N^sub 3^: A first-principle study von Bagheri, Mohammad, Faez, Rahim

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Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons von Majidi, Danial, Faez, Rahim

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Modeling of a vertical tunneling transistor based on Gr-hBN- χ 3 borophene heterostructure von Abbasi, Reza, Faez, Rahim, Horri, Ashkan, Moravvej-Farshi, Mohammad Kazem

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Engineered Nanopores-Based Armchair Graphene Nanoribbon FET With Resonant Tunneling Performance von Rahmani, Morteza, Ahmadi, Vahid, Faez, Rahim

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Electro-optical properties of APS and APhS linkers on silicon thin film: A DFT study von Assareh Pour, Farhad, Darvish, Ghafar, Faez, Rahim

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Computational study of spin caloritronics in a pristine and defective antimonene nanoribbon von Hashemi, Samaneh, Faez, Rahim, Darvish, Ghafar

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Tight-Binding Model of χ3 and β12 Structures of Borophene von Abbasi, Reza, Faez, Rahim, Horri, Ashkan, Moravvej-Farshi, Mohammad Kazem

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Tight-binding model for the electronic properties of buckled triangular borophene von Horri, Ashkan, Faez, Rahim

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